ZXMN10A07ZTA

P1-P3 P4-P6 P7-P7

ZXMN10A07Z

Document number DS33565 Rev. 7- 2

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ZXMN10A07Z

Typical Characteristics

0.1 1 10

0.01

0.1

1

0.1 1 10

0.01

0.1

1

3456

0.01

0.1

1

-50 0 50 100 150

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.01 0.1 1

1

10

0.4 0.6 0.8 1.0 1.2

0.1

1

10

6V

7V

10V

5V

4V

Output Characteristics

T = 25°C

4.5V

V

GS

I

D

Drain Current (A)

V

DS

Drain-Source Voltage (V)

10V

7V

6V

4.5V

5V

3.5V

Output Characteristics

T = 150°C

V

GS

4V

I

D

Drain Current (A)

V

DS

Drain-Source Voltage (V)

Typical Transfer Characteristics

V

DS

= 10V

T = 25°C

T = 150°C

I

D

Drain Current (A)

V

GS

Gate-Source Voltage (V)

Normalised Curves v Temperature

R

DS(on)

V

GS

= 10V

I

D

= 1.5A

V

GS(th)

V

GS

= V

DS

I

D

= 250uA

Normalised R

DS(on)

and V

GS(th)

Tj Junction Temperature (°C)

7V

6V

10V

5V

4.5V

On-Resistance v Drain Current

T = 25°C

V

GS

R

DS(on)

Drain-Source On-Resistance (Ω)

I

D

Drain Current (A)

T = 150°C

T = 25°C

Source-Drain Diode Forward Voltage

V

SD

Source-Drain Voltage (V)

I

SD

Reverse Drain Current (A)

ZXMN10A07Z

Document number DS33565 Rev. 7- 2

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ZXMN10A07Z

Typical Characteristics - Continued

Test Circuits

ZXMN10A07Z

Document number DS33565 Rev. 7- 2

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Package Outline Dimensions

Suggested Pad Layout

SOT89

Dim Min Max

A 1.40 1.60

B 0.44 0.62

B1 0.35 0.54

C 0.35 0.44

D 4.40 4.60

D1 1.62 1.83

E 2.29 2.60

e 1.50 Typ

H 3.94 4.25

H1 2.63 2.93

L 0.89 1.20

All Dimensions in mm

Dimensions Value (in mm)

X 0.900

X1 1.733

X2 0.416

Y 1.300

Y1 4.600

Y2 1.475

Y3 0.950

Y4 1.125

C 1.500

E

H

D1

B1

B

e

C

L

A

D

8° (4X)

H

R

0

.

2

0

0

Y1

X1

Y2

Y

C

X (3x)

Y3

Y4

X2 (2x)

P1-P3 P4-P6 P7-P7

ZXMN10A07ZTA

Mfr. #:

Buy ZXMN10A07ZTA

Manufacturer:

Diodes Incorporated

Description:

MOSFET 100V N-Chnl UMOS

Lifecycle:

New from this manufacturer.

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ZXMN10A07ZTA