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BUL128FP

P1-P3P4-P6P7-P7
BUL128FP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■ STMicroelectronics PREFERRED
SALESTYPE
■ NPN TRANSISTOR
■ HIGH VOLTAGE CAPABILITY
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED
APPLICATIONS:
■ ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
®
INTERNAL SCHEMATIC DIAGRAM
September 2001
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0) 700 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 400 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 9 V
I
C
Collector Current 4 A
I
CM
Collector Peak Current (t
p
< 5 ms) 8 A
I
B
Base Current 2 A
I
BM
Base Peak Current (t
p
< 5 ms) 4 A
P
tot
Total Dissipation at T
c
= 25
o
C31W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
1
2
3
TO-220FP
1/7
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
4.1
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
Collector Cut-off
Current (V
BE
= -1.5 V)
V
CE
= 700 V
V
CE
= 700 V T
j
= 125
o
C
100
500
µA
µA
V
EBO
Emitter-Base Voltage
(I
C
= 0)
I
E
= 10 mA 9 V
V
CEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 100 mA L = 25 mH 400 V
I
CEO
Collector Cut-Off
Current (I
B
= 0)
V
CE
= 400 V 250 µA
V
CE(sat)
∗ Collector-Emitter
Saturation Voltage
I
C
= 0.5 A I
B
= 0.1 A
I
C
= 1 A I
B
= 0.2 A
I
C
= 2.5 A I
B
= 0.5 A
I
C
= 4 A I
B
= 1 A 0.5
0.7
1
1.5
V
V
V
V
V
BE(sat)
∗ Base-Emitter
Saturation Voltage
I
C
= 0.5 A I
B
= 0.1 A
I
C
= 1 A I
B
= 0.2 A
I
C
= 2.5 A I
B
= 0.5 A
1.1
1.2
1.3
V
V
V
h
FE
∗ DC Current Gain I
C
= 10 mA V
CE
= 5 V
I
C
= 1 A V
CE
= 5 V
I
C
= 2 A V
CE
= 5 V
10
15
14
45
40
t
s
t
f
RESISTIVE LOAD
Storage Time
Fall Time
V
CC
= 125 V I
C
= 2 A
I
B1
= 0.4 A I
B2
= -0.4 A
T
p
= 30 µs (see fig.2)
1.9
0.2
2.9
0.4
µs
µs
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 2 A I
B1
= 0.4 A
V
BE(off)
= -5 V R
BB
= 0 Ω
V
clamp
= 200 V (see fig.1)
0.6
0.1
1
0.2
µs
µs
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
BUL128FP
2/7
Safe Operating Areas
DC Current Gain
Collector Emitter Saturation Voltage
Derating Curve
DC Current Gain
Base Emitter Saturation Voltage
BUL128FP
3/7
P1-P3P4-P6P7-P7

BUL128FP

Mfr. #:
Buy BUL128FP
Manufacturer:
STMicroelectronics
Description:
TRANS NPN 400V 4A TO-220FP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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