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MPSW56RLRA

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2010
August, 2010 − Rev. 4
1 Publication Order Number:
MPSW55/D
MPSW55, MPSW56
One Watt Amplifier
Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage MPSW55
MPSW56
V
CEO
−60
−80
Vdc
Collector−Base Voltage MPSW55
MPSW56
V
CBO
−60
−80
Vdc
Emitter−Base Voltage V
EBO
−4.0 Vdc
Collector Current − Continuous I
C
−500 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
1.0
8.0
W
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
2.5
20
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
R
q
JA
125 °C/W
Thermal Resistance, Junction−to−Case
R
q
JC
50 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MPSW56RLRP TO−92 2000/Ammo Pack
MPSW56RLRPG TO−92
(Pb−Free)
2000/Ammo Pack
MPSW55RLRAG TO−92
(Pb−Free)
2000/Tape & Reel
Device Package Shipping
†
MPSW55G TO−92
(Pb−Free)
5000 Units/Bulk
ORDERING INFORMATION
x = 5 or 6
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
MPS
W5x
AYWW G
G
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO−92 1 WATT
(TO−226)
CASE 29−10
STYLE 1
MPSW55, MPSW56
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(I
C
= −1.0 mAdc, I
B
= 0) MPSW55
MPSW56
V
(BR)CEO
−60
−80
−
−
Vdc
Emitter−Base Breakdown Voltage
(I
E
= −100 mAdc, I
C
= 0)
V
(BR)EBO
−4.0 −
Vdc
Collector Cutoff Current
(V
CE
= −40 Vdc, I
B
= 0) MPSW55
(V
CE
= −60 Vdc, I
B
= 0) MPSW56
I
CES
−
−
−0.5
−0.5
mAdc
Collector Cutoff Current
(V
CB
= −40 Vdc, I
E
= 0) MPSW55
(V
CB
= −60 Vdc, I
E
= 0) MPSW56
I
CBO
−
−
−0.1
−0.1
mAdc
Emitter Cutoff Current
(V
EB
= −3.0 Vdc, I
C
= 0)
I
EBO
− −0.1
mAdc
ON CHARACTERISTICS
(1)
DC Current Gain
(I
C
= −50 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −250 mAdc, V
CE
= −1.0 Vdc)
h
FE
100
50
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= −250 mAdc, I
B
= −10 mAdc)
V
CE(sat)
− −0.5
Vdc
Base−Emitter On Voltage
(I
C
= −250 mAdc, V
CE
= −5.0 Vdc)
V
BE(on)
− −1.2
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(I
C
= −250 mAdc, V
CE
= −5.0 Vdc, f = 20 MHz)
f
T
50 −
MHz
Output Capacitance
(V
CB
= −10 Vdc, f = 1.0 MHz)
C
obo
− 15
pF
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
400
-0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0
-10 -20 -30 -50 -70 -100 -200
200
100
80
60
40
h
FE
, DC CURRENT GAIN
T
J
= 125°C
25°C
-55°C
V
CE
= -1.0 V
-300 -500
MPSW55, MPSW56
http://onsemi.com
3
I
B
, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
-1.0
-0.8
-0.6
-0.4
-0.2
0
-0.1 -10-1.0
T
J
= 25°C
I
C
= -10 mA
-0.05 -0.2 -0.5 -2.0 -5.0 -20 -50
-100 mA -250 mA -500 mA
-50
mA
I
C
, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
V, VOLTAGE (VOLTS)
-1.0
-0.8
-0.6
-0.4
-0.2
0
T
J
= 25°C
V
BE(on)
@ V
CE
= -1.0 V
V
CE(sat)
@ I
C
/I
B
= 10
-0.5
V
BE(sat)
@ I
C
/I
B
= 10
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Base−Emitter Temperature Coefficient
-0.8
-2.8
-1.0 -100-10
q
VB
for V
BE
-0.5 -2.0 -5.0 -20 -50 -200
-1.2
-1.6
-2.0
-2.4
VB
, TEMPERATURE COEFFICIENT (mV/ C)°θ
-500
C, CAPACITANCE (pF)
Figure 5. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
-100-50-20-10-5.0-2.0-1.0-0.5-0.2-0.1
100
70
50
30
20
5.0
T
J
= 25°C
C
obo
C
ibo
10
7.0
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
-2 k
-1.0
I
C
, COLLECTOR CURRENT (mA)
MPSW55
-2.0 -5.0
Figure 6. Current−Gain — Bandwidth Product
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-500
-200
-100
-50
-20
-10
-10 -20 -60 -80 -100
MPSW56
100 ms
1.0 ms
1.0 s
T
C
= 25°C
T
A
= 25°C
dc
dc
-1 k
DUTY CYCLE ≤ 10%
I
C
, COLLECTOR CURRENT (mA)
-200-70-50-30-20-10-7.0-5.0-3.0-2.0
200
100
70
50
20
V
CE
= -2.0 V
T
J
= 25°C
f, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
T
-100
30
Figure 7. Active Region — Safe Operating
Area
P1-P3P4-P4

MPSW56RLRA

Mfr. #:
Buy MPSW56RLRA
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 500mA 80V 1W PNP
Lifecycle:
New from this manufacturer.
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