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NRVB140ESFT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2014
February, 2014 − Rev. 3
1 Publication Order Number:
MBR140ESF/D
MBR140ESF, NRVB140ESF
Surface Mount
Schottky Power Rectifier
Plastic SOD−123 Package
This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style. Because of its small size,
it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC−DC and
DC−DC converters, reverse battery protection, and “Oring” of
multiple supply voltages and any other application where performance
and size are critical.
Features
• Guardring for Stress Protection
• Low Reverse Leakage
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Package Designed for Optimal Automated Board Assembly
• ESD Rating:
♦ Human Body Model = 3B
♦ Machine Model = M4
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant*
Mechanical Characteristics
• Device Marking: E4F
• Polarity Designator: Cathode Band
• Weight: 11.7 mg (approximately)
• Case: Epoxy, Molded
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
†
ORDERING INFORMATION
SOD−123FL
CASE 498
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
40 VOLTS
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MARKING DIAGRAM
E4F = Specific Device Code
M = Date Code
G = Pb−Free Package)
E4FMG
G
MBR140ESFT3G SOD−123FL
(Pb−Free)
10,000 /
Tape & Reel ***
MBR140ESFT1G SOD−123FL
(Pb−Free)
3,000 /
Tape & Reel **
(Note: Microdot may be in either location)
** 8 mm Tape, 7” Reel
*** 8 mm Tape, 13” Reel
NRVB140ESFT3G SOD−123FL
(Pb−Free)
10,000 /
Tape & Reel ***
NRVB140ESFT1G SOD−123FL
(Pb−Free)
3,000 /
Tape & Reel **
MBR140ESF, NRVB140ESF
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
40 V
Average Rectified Forward Current I
O
1.0 A
Peak Repetitive Forward Current I
FRM
2.0 A
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
I
FSM
30
A
Storage Temperature T
stg
−55 to 175 °C
Operating Junction Temperature T
J
−55 to 175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 2)
R
tjl
R
tjl
R
tja
R
tja
26
21
325
82
°C/W
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm
2
).
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 3)
V
F
T
J
= 25°C
V
(I
F
= 1.0 A) 0.56
Maximum Instantaneous Reverse Current (Note 3)
I
R
T
J
= 25°C mA
(V
R
= 40 V) 30
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%.
MBR140ESF, NRVB140ESF
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics
I
F
, INSTANTANEOUS FORWARD
CURRENT (A)
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
T
A
= 150°C
T
A
= 25°C
T
A
= 125°C
0.10
1.0
10.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
T
A
= 85°C
0.10
1.0
10.0
0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.0
Figure 2. Maximum Instantaneous Forward
Characteristics
I
F
, INSTANTANEOUS FORWARD
CURRENT (A)
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
T
A
= 150°C
T
A
= 25°C
T
A
= 125°C
T
A
= 85°C
Figure 3. Typical Reverse Characteristics
1.E−03
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
I
R
, INSTANTANEOUS REVERSE CURRENT (mA)
T
A
= 150°C
T
A
= 25°C
T
A
= 125°C
1.E−04
1.E−05
1.E−06
1.E−07
T
A
= 85°C
Figure 4. Maximum Reverse Characteristics
1.E−03
0 5 10 15 20 25 30 35 40
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
I
R
, INSTANTANEOUS REVERSE CURRENT (mA)
1.E−04
1.E−05
1.E−06
1.E−02
T
A
= 150°C
T
A
= 25°C
T
A
= 125°C
T
A
= 85°C
0 5 10 15 20 25 30 35 40
1.E−01
0.00
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
0 20 40 60 80 100 120 140
10
100
110
Figure 5. Typical Junction Capacitance
V
R
, REVERSE VOLTAGE (V)
C, JUNCTION CAPACITANCE (pF)
T
J
= 25°C
Figure 6. Current Derating, Case
T
C
, CASE TEMPERATURE (°C)
SQUARE WAVE
dc
R
q
JA
= 82°C/W
I
F(AV)
, AVERAGE FORWARD
CURRENT (A)
P1-P3P4-P5

NRVB140ESFT1G

Mfr. #:
Buy NRVB140ESFT1G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers REC SOD123 1.0AMP 40 VOLT
Lifecycle:
New from this manufacturer.
Delivery:
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