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VS-11DQ03

P1-P3P4-P6
VS-11DQ03, VS-11DQ03-M3, VS-11DQ04, VS-11DQ04-M3
www.vishay.com
Vishay Semiconductors
Revision: 21-Sep-11
1
Document Number: 93205
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Rectifier, 1.1 A
FEATURES
• Low profile, axial leaded outline
• High frequency operation
• Very low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and
long term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-11DQ... axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
PRODUCT SUMMARY
Package DO-204AL (DO-41)
I
F(AV)
1.1 A
V
R
30 V, 40 V
V
F
at I
F
See Electrical table
I
RM
max. 6.0 mA at 125 °C
T
J
max. 150 °C
Diode variation Single die
E
AS
3.0 mJ
Cathode Anode
DO-204AL
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 1.1 A
V
RRM
30/40 V
I
FSM
t
p
= 5 μs sine 225 A
V
F
1 Apk, T
J
= 25 °C 0.55 V
T
J
Range - 40 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-11DQ03 VS-11DQ03-M3 VS-11DQ04 VS-11DQ04-M3 UNITS
Maximum DC reverse voltage V
R
30 30 40 40 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 4
I
F(AV)
50 % duty cycle at T
C
= 75 °C, rectangular waveform 1.1
A
Maximum peak one cycle
non-repetitive surge current
See fig. 6
I
FSM
5 µs sine or 3 µs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
225
10 ms sine or 6 ms rect. pulse 35
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 1.0 A, L = 6 mH 3.0 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1.0 A
VS-11DQ03, VS-11DQ03-M3, VS-11DQ04, VS-11DQ04-M3
www.vishay.com
Vishay Semiconductors
Revision: 21-Sep-11
2
Document Number: 93205
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
Note
(1)
thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
1 A
T
J
= 25 °C
0.55
V
2 A 0.71
1 A
T
J
= 125 °C
0.50
2 A 0.61
Maximum reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
1.0
mA
T
J
= 125 °C 6.0
Typical junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 60 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
(1)
, T
Stg
- 40 to 150 °C
Maximum thermal resistance,
junction to ambient
R
thJA
DC operation
Without cooling fin
100
°C/W
Typical thermal resistance,
junction to lead
R
thJL
DC operation
See fig. 4
81
Approximate weight
0.33 g
0.012 oz.
Marking device Case style DO-204AL (DO-41)
11DQ03
11DQ04
dP
tot
dT
J
-------------
1
R
thJA
--------------<
VS-11DQ03, VS-11DQ03-M3, VS-11DQ04, VS-11DQ04-M3
www.vishay.com
Vishay Semiconductors
Revision: 21-Sep-11
3
Document Number: 93205
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Fig. 4 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6); Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
I
F
- Instantaneous Forward Current (A)
93205_01
V
FM
- Forward Voltage Drop (V)
0.1
1
10
0 0.3 0.6 0.9 1.2 1.5
T = 150 °C
T = 125 °C
T = 25 °C
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
93205_02
0.0001
0.001
0.01
0.1
1
10
100
0 10 20 30 40
T
J
= 150° C
T
J
= 125° C
T
J
= 25° C
10
100
0 10 20 30 40 50
T
J
= 25°C
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
93205_03
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
93205_04
0
30
60
90
120
150
0 0.3 0.6 0.9 1.2 1.5
DC
see note (1)
Square wave (D = 0.50)
80 % Rated V
R
applied
Average Forward Current - I
F(AV)
(A)
Average Power Loss (W)
93205_05
0
0.2
0.4
0.6
0.8
0 0.3 0.6 0.9 1.2 1.5
DC
RMS Limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
t
p
- Square Wave Pulse Duration (µs)
I
FSM
- Non-Repetitive Surge Current (A)
93205_06
10
100
1000
10 100 1000 10 000
At Any Rated Load Condition
And With rated V
RRM
Applied
Following Surge
T
J
= 25 °C
P1-P3P4-P6

VS-11DQ03

Mfr. #:
Buy VS-11DQ03
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 625-SB130-E3/73
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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