1N5360e3/TR12

SANKEN ELECTRIC CO., LTD. FMEN-230B
101007 1/5
61426-01
1. Scope
The present specifications shall apply to an FMEN-230B.
2. Outline
Type Silicon Schottky Barrier Diode
Structure Resin Molded
Applications High Frequency Rectification
3. Flammability
UL94V-0(Equivalent)
SANKEN ELECTRIC CO., LTD. FMEN-230B
101007 2/5
61426-01
4. Absolute maximum ratings
No.
Item Symbol
Unit Rating Conditions
1
Transient Peak Reverse Voltage
V
RSM
V 150
2
Peak Reverse Voltage
V
RM
V 150
3
Average Forward Current
I
F(AV)
A 30 Refer to Derating of 7
4
Peak Surge Forward Current
I
FSM
A 150
Half sinewave, one shot
5
I
2
t Limiting Value
I
2
t A
2
s 112.5 1msec≤t≤10msec
6
Junction Temperature
T
j
°C
-40+150
7
Storage Temperature
T
stg
°C
-40+150
No.1,2,4&5 show ratings per one chip.
5. Electrical characteristics (Ta=25°C unless otherwise specified)
No.
Item
記号
Symbol
単位
Unit
Value
Conditions
1 Forward Voltage Drop V
F
V 0.95 max. I
F
=15A
2
Reverse Leakage Current
I
R
uA 300 max. V
R
=V
RM
3
Reverse Leakage Current Under
High Temperature
HI
R
mA 75 max. V
R
=V
RM
, T
j
=150°C
4
Thermal Resistance
R
th(j-c)
°C/W
4.0 max.
Between Junction and case
No.1,2&3 show characteristics per one chip.
SANKEN ELECTRIC CO., LTD. FMEN-230B
101007 3/5
61426-01
6. Characteristics
I
F(AV)
- P
F
Forward Power Dissipation (W)
Average Forward Current (A)
V
R
- P
R
Reverse Power Dissipation (W)
Reverse Voltage (V)
0
10
20
0 50 100 150
0
10
20
30
40
0 10 20 30
Tj=150°C
t
T
t/T=1/6
Tj=150°C
t
T
1
-
t/T=5/6
sinewave
1
-
t/T=2/3
1
-
t/T=1/2
DC
t/T=1/2
t/T=1/3,sinewave

1N5360e3/TR12

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
Zener Diodes Zener Diodes
Lifecycle:
New from this manufacturer.
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