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IRLR8259TRPBF

P1-P3P4-P6P7-P9P10-P11
IRLR/U8259PbF
www.irf.com 7
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET
®
Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple ≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
* V
GS
= 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
R
G
V
DD
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Fig 16. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2QgdQgodr
IRLR/U8259PbF
8 www.irf.com
D-Pak (TO-252AA) Part Marking Information
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IRLR/U8259PbF
www.irf.com 9
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
25
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
P1-P3P4-P6P7-P9P10-P11

IRLR8259TRPBF

Mfr. #:
Buy IRLR8259TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 25V 57A 8.7mOhm 6.8nC LogLvl
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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