IRLU8259PBF Datasheet IRLR8259TRPBF, IRLR8259PBF, IRLU8259PBF | P1-P3

www.irf.com 1

12/16/08

IRLR8259PbF

IRLU8259PbF

HEXFET

®

Power MOSFET

Notes  through  are on page 11

Applications

Benefits

PD - 97360

D-Pak

IRLR8259PbF

I-Pak

IRLU8259PbF

G

S

D

G

D

S

GDS

Gate Drain Source

l High Frequency Synchronous Buck

Converters for Computer Processor Power

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

l Very Low RDS(on) at 4.5V V

GS

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

l Lead-Free

l RoHS compliant

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

V

DSS

R

DS(on)

max

Qg

25V

8.7m

Ω

6.8nC

Absolute Maximum Ratings

Parameter Units

V

DS

Drain-to-Source Voltage V

V

GS

Gate-to-Source Voltage

I

D

@ T

C

= 25°C

Continuous Drain Current, V

GS

@ 10V

I

D

@ T

C

= 100°C

Continuous Drain Current, V

GS

@ 10V

A

I

DM

Pulsed Drain

C

urrent

P

D

@T

C

= 25°C

Maximum Power Dissipation

W

P

D

@T

C

= 100°C

Maximum Power Dissipation

Linear Derating Factor W/°C

T

J

Operating Junction and °C

T

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Thermal Resistance

Parameter Typ. Max. Units

R

θ

JC

Junction-to-Case ––– 3.15

R

θ

JA

Junction-to-Ambient

(

P

C

B Mount

)

––– 50 °C/W

R

θ

JA

Junction-to-Ambient ––– 110

48

Max.

57

40

230

± 20

25

0.32

24

300 (1.6mm from case)

-55 to + 175

IRLR/U8259PbF

2 www.irf.com

Static @ T

J

= 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

BV

DSS

Drain-to-Source Breakdown Voltage

25 ––– ––– V

∆ΒV

DSS

/

∆T

J

Breakdown Voltage Temp. Coefficient

––– 18 ––– mV/°C

R

DS(on)

Static Drain-to-Source On-Resistance

––– 6.3 8.7

––– 10.6 12.9

V

GS(th)

Gate Threshold Voltage

1.35 1.90 2.35 V

∆V

GS(th)

/

∆T

J

Gate Threshold Voltage Coefficient

––– -7.1 ––– mV/°C

I

DSS

Drain-to-Source Leakage Current

––– ––– 1.0

––– ––– 150

I

GSS

Gate-to-Source Forward Leakage

––– ––– 100

Gate-to-Source Reverse Leakage

––– ––– -100

gfs

Forward Transconductance

55 ––– ––– S

Q

g

Total Gate Charge

––– 6.8 10

Q

gs1

Pre-Vth Gate-to-Source Charge

––– 1.5 –––

Q

gs2

Post-Vth Gate-to-Source Charge

––– 1.1 ––– nC

Q

gd

Gate-to-Drain Charge

––– 2.4 –––

Q

godr

Gate Charge Overdrive

––– 1.8 ––– See Fig. 16

Q

sw

Switch Charge (Q

gs2

+ Q

gd

)

––– 3.5 –––

Q

oss

Output Charge

––– 5.9 ––– nC

R

G

Gate Resistance ––– 2.2 3.6

Ω

t

d(on)

Turn-On Delay Time

––– 8.4 –––

t

r

Rise Time

––– 38 –––

t

d(off)

Turn-Off Delay Time

––– 9.1 –––

t

f

Fall Time

––– 8.9 –––

C

iss

Input Capacitance

––– 900 –––

C

oss

Output Capacitance

––– 300 –––

C

rss

Reverse Transfer Capacitance

––– 110 –––

Avalanche Characteristics

Parameter Units

E

AS

Single Pulse Avalanche Energy

mJ

I

AR

Avalanche Current

A

E

AR

Repetitive Avalanche Energy

mJ

Diode Characteristics

Parameter Min. Typ. Max. Units

I

S

Continuous Source Current

––– –––

(Body Diode)

I

SM

Pulsed Source Current

––– –––

(Body Diode)

V

SD

Diode Forward Voltage

––– ––– 1.0 V

t

rr

Reverse Recovery Time

––– 17 26 ns

Q

rr

Reverse Recovery Charge

––– 15 23 nC

t

on

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

MOSFET symbol

–––

V

GS

= 4.5V

Typ.

–––

I

D

= 17A

V

GS

= 0V

V

DS

= 13V

R

G

= 1.8Ω

T

J

= 25°C, I

F

= 17A, V

DD

= 13V

di/dt = 200A/µs

T

J

= 25°C, I

S

= 17A, V

GS

= 0V

showing the

integral reverse

p-n junction diode.

V

DS

= 13V, I

D

= 17A

V

DS

= 16V, V

GS

= 0V

V

DD

= 13V, V

GS

= 4.5V

I

D

= 17A

V

DS

= 13V

Conditions

V

GS

= 0V, I

D

= 250µA

Reference to 25°C, I

D

= 1mA

V

GS

= 10V, I

D

= 21A

V

GS

= 4.5V, I

D

= 17A

V

GS

= 20V

V

GS

= -20V

V

DS

= V

GS

, I

D

= 25µA

V

DS

= 20V, V

GS

= 0V

V

DS

= 20V, V

GS

= 0V, T

J

= 125°C

Conditions

4.8

See Fig. 14

Max.

67

17

ƒ = 1.0MHz

mΩ

56

230

µA

nA

ns

pF

A

IRLR/U8259PbF

www.irf.com 3

Fig 4. Normalized On-Resistance

vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

1 2 3 4 5 6 7 8

V

GS

, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

T

J

= 25°C

T

J

= 175°C

V

DS

= 15V

≤

60µs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100120140160180

T

J

, Junction Temperature (°C)

0.5

1.0

1.5

2.0

R

D

S

(

o

n

)

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

O

n

R

e

s

i

s

t

a

n

c

e

(

N

o

r

m

a

l

i

z

e

d

)

I

D

= 21A

V

GS

= 10V

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

2.5V

≤

60µs PULSE WIDTH

Tj = 175°C

VGS

TOP 10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

BOTTOM 2.5V

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

VGS

TOP 10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

BOTTOM 2.5V

≤

60µs PULSE WIDTH

Tj = 25°C

2.5V

IRLU8259PBF

IRLU8259PBF

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