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Document Number: 71249
S10-2140-Rev. F, 20-Sep-10
Vishay Siliconix
Si1302DL
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ Max. Unit
Static
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS,
I
D
= 250 µA 1 3 V
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 30 V, V
GS
= 0 V 1
µA
V
DS
= 30 V, V
GS
= 0 V, T
J
= 70 °C 5
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
1.5 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 0.6 A 0.410 0.480
V
GS
= 4.5 V, I
D
= 0.2 A 0.600 0.700
Forward Transconductance
a
g
fs
V
GS
= 15 V, I
D
= 0.6 A 0.75 S
Diode Forward Voltage
a
V
SD
I
S
= 0.23 A, V
GS
= 0 V 0.8 1.2 V
Dynamic
b
Total Gate Charge Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 0.6 A
0.86 1.4
nCGate-Source Charge Q
gs
0.24
Gate-Drain Charge Q
gd
0.08
Tur n - On D e lay T i me t
d(on)
V
DD
= 15 V, R
L
= 30
I
D
0.5 A, V
GEN
= 10 V, R
g
= 6
510
ns
Rise Time t
r
815
Turn-Off DelayTime t
d(off)
815
Fall Time t
f
715
Source-Drain Reverse Recovery Time t
rr
I
F
= 0.23 A, dI/dt = 100 A/µs 15 30
Output Characteristics
0.0
0.2
0.4
0.6
0.8
1.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
= 10 V thru 4 V
3 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
Transfer Characteristics
0.0
0.2
0.4
0.6
0.8
1.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
T
C
= 125 °C
- 55 °C
25 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
