CBTL02GP023 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet Rev. 2 — 14 August 2017 4 of 19
NXP Semiconductors
CBTL02GP023
5 Gbps rail-to-rail low insertion loss switch
6. Functional description
Refer to Figure 1 “Block diagram of CBTL02GP023.
ENH pin is used to power down the switches. When ENH is low, the switches are in high
impedance sleep mode. ONH can also be used to control the switch with better OFF
isolation performance.
Table 4. Enable control table
ENH Switch state Max current consumption
0OFF12 A
1 ON 500 A
Table 5. ONH and ENH control table
ONH ENH Switch state Max current OFF isolation at
2.5 GHz
00OFF 12A 11 dB
0 1 OFF 500 A 16 dB
10OFF 12 A 11 dB
1 1 ON 500 ANA
CBTL02GP023 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet Rev. 2 — 14 August 2017 5 of 19
NXP Semiconductors
CBTL02GP023
5 Gbps rail-to-rail low insertion loss switch
7. Limiting values
[1] Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the
device. These are stress ratings only and functional operation of the device at these or any conditions
beyond those indicated under recommended operating conditions is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
[2] All voltage values, except differential voltages, are with respect to network ground terminal.
[3] Human Body Model: ANSI/EOS/ESD-S5.1-1994, standard for ESD sensitivity testing, Human Body Model -
Component level; Electrostatic Discharge Association, Rome, NY, USA.
[4] Charged Device Model: ANSI/EOS/ESD-S5.3-1-1999, standard for ESD sensitivity testing, Charged Device
Model - Component level; Electrostatic Discharge Association, Rome, NY, USA.
8. Recommended operating conditions
Table 6. Limiting values
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DD
supply voltage
[2]
0.3 +4.6 V
V
I
input voltage of control pins
[2]
0.3 +5.5 V
V
IO
voltage of I/O pins of
switches
[2]
0.3 +4.6 V
T
stg
storage temperature 65 +150 C
V
ESD
electrostatic discharge
voltage
HBM
[3]
- 2000 V
CDM
[4]
-750V
Table 7. Operating conditions
Symbol Parameter Conditions Min Typ Max Unit
VDD supply voltage 3.3 V supply option 2.7 - 3.5 V
V
I
input voltage CMOS inputs 0.3 - +5.5 V
MUX I/O pins 0.3 - +3.5 V
T
amb
ambient operating
temperature
operating in free air 20 - +85 C
CBTL02GP023 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet Rev. 2 — 14 August 2017 6 of 19
NXP Semiconductors
CBTL02GP023
5 Gbps rail-to-rail low insertion loss switch
9. Characteristics
9.1 Device general characteristics
9.2 Switch channel characteristics
Table 8. General characteristics
Symbol Parameter Conditions Min Typ Max Unit
I
DD
supply current VDD = 3.5 V - - 0.5 mA
P
cons
power consumption VDD = 3.5 V - - 1.75 mW
P
sleep
sleep mode power
consumption
ENH = 0 - - 42 W
T
Startup
start-up time supply voltage valid
and ENH goes HIGH
to channel specified
operating
characteristics
-220500s
T
switch
5 Gbps rail-to-rail low
insertion loss switching
time
ONH goes from LOW
to HIGH
-210s
ONH goes from HIGH
to LOW
- 200 1000 s
Table 9. Dynamic and static characteristics
Symbol Parameter Conditions Min Typ Max Unit
DDIL differential insertion loss Channel is off with ENH = HIGH and ONH = LOW
f = 2.5 GHz - 16 - dB
f = 100 MHz - 40 - dB
Channel is off with whole chip disabled ENH = LOW
and ONH = X (don’t care)
f = 2.5 GHz - 11 - dB
f = 100 MHz - 30 - dB
Channel is on with ONH = HIGH and ENH = HIGH
f = 2.5 GHz - 1.5 - dB
f = 100 MHz - 1- dB
DDRL Differential Return Loss f = 2.5 GHz - 15 - dB

CBTL02GP023HOZ

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
Analog Switch ICs CBTL02GP023HO/DHX2QFN14///REEL 13 Q1 NDP SSB
Lifecycle:
New from this manufacturer.
Delivery:
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