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VS-SD403C14S15C

P1-P3P4-P6P7-P8
VS-SD403C..C Series
www.vishay.com
Vishay Semiconductors
Revision: 15-Apr-14
4
Document Number: 93175
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 1 - Thermal Impedance Z
thJ-hs
Characteristics
Fig. 10 - Recovery Time Characteristics
Fig. 11 - Recovery Charge Characteristics
2000
2500
3000
3500
4000
4500
5000
5500
6000
001011
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine W ave Forw ard Current (A)
In it ia l T = 1 2 5 ° C
@ 60 Hz 0.0 083 s
@ 50 Hz 0.0 100 s
J
At Any Rated Load Condition And With
R a t e d V A p p lie d Fo llo w in g S u r g e .
RRM
SD403C..C Series
1000
2000
3000
4000
5000
6000
7000
11.010.0
Pulse Train Duration (s)
Peak Half Sine Wave Forward Current (A)
Versus Pulse Train Duration.
Maximum Non Repetitive Surge Current
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
SD 403C ..C Se ries
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10 100
Sq ua re W ave P ulse D u ration (s)
thJ-hs
Transient Therm al Im pedan ce Z (K/W)
Steady State V alue
R = 0 .1 6 K /W
(Sing le Side C oo le d)
R = 0 .0 8 K /W
(Double Side Cooled)
(D C Ope ratio n)
thJ-hs
thJ- hs
SD 403 C..C S eries
1.6
1.8
2
2.2
2.4
2.6
2.8
00101
Rate Of Fall Of Forward Current - di/dt (A/µs)
Maximum Reverse Recovery Time - Trr (µs)
200 A
I = 750 A
Squa re Pulse
400 A
FM
SD 4 03C ..S10C Se ries
T = 125 °C ; V = 30V
r
J
10
20
30
40
50
60
70
80
90
100
110
120
130
140
0 20406080100
Maximum Reverse Recovery Charge - Qrr (µC)
Rate Of Fall Of Forward Current - di/dt (A/µs)
200 A
400 A
I = 7 50 A
Squa re Pulse
FM
SD 40 3C ..S10 C Se rie s
T = 125 ° C; V = 3 0V
r
J
VS-SD403C..C Series
www.vishay.com
Vishay Semiconductors
Revision: 15-Apr-14
5
Document Number: 93175
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 12 - Recovery Current Characteristics
Fig. 13 - Recovery Time Characteristics
Fig. 14 - Recovery Charge Characteristics
Fig. 15 - Recovery Current Characteristics
Fig. 16 - Maximum Total Energy Loss Per Pulse Characteristics
10
20
30
40
50
60
70
80
90
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Recovery Current - Irr (A)
Rate Of Fall Of Forward Current - di/dt (A/µs)
200 A
400 A
I = 750 A
Sq u a re P u lse
FM
SD 403C..S10C Se ries
T = 125 °C; V = 30V
r
J
1.5
2
2.5
3
3.5
00101
Rate Of Fall Of Forward Current - di/dt (A/µs)
Maximum Reverse Recovery Time - Trr (µs)
200 A
I = 750 A
Sq uare Pulse
400 A
FM
SD 403C ..S1 5C Serie s
T = 125 °C ; V = 30V
r
J
50
60
70
80
90
100
110
120
130
140
150
160
170
0 20406080100
M a xim um R e verse R e co very C ha rg e - Q rr (µC )
Rate Of Fall Of Forward Current - di/dt (A/µs)
200 A
I = 75 0 A
Sq ua r e P u ls e
400 A
FM
SD40 3C..S15C Se rie s
T = 12 5 °C ; V = 30V
r
J
10
20
30
40
50
60
70
80
90
100
110
120
130
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Recovery Current - Irr (A)
Rate O f Fall Of Forward Current - di/dt (A/µs)
200 A
I = 750 A
Sq u a re P u ls e
FM
400 A
SD403C..S15C Series
T = 12 5 °C ; V = 30V
r
J
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E 4
1
2
0.1
Pulse Basew idth (µs)
Pe a k F o rw a rd C u rr e n t (A )
4
dv/dt = 1000V/µs
Sinu soidal Pul se
20 jou le s p e r p ulse
10
0.4
0.2
0.04
T = 125°C , V = 800V
J
RRM
0.02
0.01
SD403C ..S10C S eries
tp
1E11E21E31E4
1
2
0.1
Pulse Basew idth (µs)
4
20 joules p er pulse
10
0.4
0.2
0.04
T = 1 25° C, V = 800V
Trapezoidal Pulse
dv/dt = 1000V/µs; d i/dt=50A/µs
SD403C..S10C Series
J
RRM
tp
VS-SD403C..C Series
www.vishay.com
Vishay Semiconductors
Revision: 15-Apr-14
6
Document Number: 93175
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 17 - Maximum Total Energy Per Pulse Characteristics
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95248
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
0.1
Pulse Ba sew id th (µs)
Peak Forward Current (A)
4
dv/dt = 1000V/µs
Si nu so idal Pu lse
20 joules per pulse
10
0.4
0.2
0.04
0.02
SD403..S15C Series
T = 125°C , V = 1120V
J
RRM
tp
1E1 1E2 1E3 1E4
1
2
0.1
Pulse Basew idth (µs)
4
20 joules per pulse
10
0.4
0.2
Trapezoid al Pulse
dv/dt = 1000V/µs; di/dt=50A/µs
SD403C..S15C Series
T = 125°C, V = 1120V
J
RR M
tp
1
- Diode
2
- Essential part number
3
- 3 = Fast recovery
4
- C = Ceramic PUK
5
- Voltage code x 100 = V
RRM
(see Voltage Ratings table)
6
-t
rr
code (see Recovery Characteristics table)
7
8
- C = PUK case DO-200AA
Device code
51 32 4 6 7 8
SDVS- 40 3 C 16 S15 C
- Vishay Semiconductors product
P1-P3P4-P6P7-P8

VS-SD403C14S15C

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Buy VS-SD403C14S15C
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 1400 Volt 430 Amp
Lifecycle:
New from this manufacturer.
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