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NSB9435T1G

P1-P3P4-P5
Semiconductor Components Industries, LLC, 2011
December, 2011 − Rev. 7
1 Publication Order Number:
NSB9435T1/D
NSB9435T1G,
NSV9435T1G
High Current Bias Resistor
Transistor
PNP Silicon
Features
Collector −Emitter Sustaining Voltage −
V
CEO(sus)
= 30 Vdc (Min) @ I
C
= 10 mAdc
High DC Current Gain −
h
FE
= 125 (Min) @ I
C
= 0.8 Adc
= 90 (Min) @ I
C
= 3.0 Adc
Low Collector −Emitter Saturation Voltage −
V
CE(sat)
= 0.275 Vdc (Max) @ I
C
= 1.2 Adc
= 0.55 Vdc (Max) @ I
C
= 3.0 Adc
SOT−223 Surface Mount Packaging
ESD Rating − Human Body Model: Class 1B
− Machine Model: Class B
AEC−Q101 Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (T
C
= 25C unless otherwise noted)
Rating
Symbol Value Unit
Collector−Emitter Voltage V
CEO
30 Vdc
Collector−Base Voltage V
CB
45 Vdc
Emitter−Base Voltage V
EB
6.0 Vdc
Base Current − Continuous I
B
1.0 Adc
Collector Current
Continuous
Peak
I
C
3.0
5.0
Adc
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
Total P
D
@ T
A
= 25_C mounted on 1 sq.
(645 sq. mm) Collector pad on FR−4 bd
material
Total P
D
@ T
A
= 25_C mounted on 0.012
sq. (7.6 sq. mm) Collector pad on FR−4 bd
material
P
D
3.0
24
1.56
0.72
W
mW/_C
W
W
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to
+150
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
†
ORDERING INFORMATION
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
COLLECTOR 2, 4
BASE
1
EMITTER 3
POWER BJT
I
C
= 3.0 AMPERES
BV
CEO
= 30 VOLTS
V
CE(sat)
= 0.275 VOLTS
http://onsemi.com
NSB9435T1G SOT−223
(Pb−Free)
1,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
A = Assembly Location
Y = Year
W = Work Week
9435R = Device Code
G = Pb−Free Package
AYW
9435R G
G
(Note: Microdot may be in either location)
NSV9435T1G SOT−223
(Pb−Free)
1,000/Tape & Reel
NSB9435T1G, NSV9435T1G
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance
Junction−to−Case
Junction−to−Ambient on 1 sq. (645 sq. mm) Collector pad on FR−4 board material
Junction−to−Ambient on 0.012 sq. (7.6 sq. mm) Collector pad on FR−4 board material
R
q
JC
R
q
JA
R
q
JA
42
80
174
_C/W
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 s T
L
260
_C
ELECTRICAL CHARACTERISTICS (T
A
= 25C unless otherwise noted)
Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 10 mAdc, I
B
= 0 Adc)
V
CEO(sus)
30 − −
Vdc
Emitter−Base Voltage
(I
E
= 50 mAdc, I
C
= 0 Adc)
V
EBO
6.0 − −
Vdc
Collector Cutoff Current
(V
CE
= 25 Vdc)
(V
CE
= 25 Vdc, T
J
= 125C)
I
CER
−
−
−
−
20
200
mAdc
Emitter Cutoff Current
(V
BE
= 5.0 Vdc)
I
EBO
− − 700
mAdc
ON CHARACTERISTICS (Note 1)
Collector−Emitter Saturation Voltage
(I
C
= 0.8 Adc, I
B
= 20 mAdc)
(I
C
= 1.2 Adc, I
B
= 20 mAdc)
(I
C
= 3.0 Adc, I
B
= 0.3 Adc)
V
CE(sat)
−
−
−
0.155
−
−
0.210
0.275
0.550
Vdc
Base−Emitter Saturation Voltage
(I
C
= 3.0 Adc, I
B
= 0.3 Adc)
V
BE(sat)
− − 1.25
Vdc
Base−Emitter On Voltage
(I
C
= 1.2 Adc, V
CE
= 4.0 Vdc)
V
BE(on)
− − 1.10
Vdc
DC Current Gain
(I
C
= 0.8 Adc, V
CE
= 1.0 Vdc)
(I
C
= 1.2 Adc, V
CE
= 1.0 Vdc)
(I
C
= 3.0 Adc, V
CE
= 1.0 Vdc)
h
FE
125
110
90
220
−
−
−
−
−
−
Resistor R1 7.5 10 12.5
kW
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0 Adc, f = 1.0 MHz)
C
ob
− 100 150
pF
Input Capacitance
(V
EB
= 8.0 Vdc)
C
ib
− 135 −
pF
Current−Gain − Bandwidth Product (Note 2)
(I
C
= 500 mA, V
CE
= 10 V, F
test
= 1.0 MHz)
f
T
− 110 −
MHz
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
2. f
T
= |h
FE
| S f
test
NSB9435T1G, NSV9435T1G
http://onsemi.com
3
Figure 1. Collector Saturation Region
0.001 0.01 0.1
0.3
0
0.1
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
I
B
, BASE CURRENT (mA)
Figure 2. DC Current Gain
0.1 1 10
1000
10
100
h
FE
, DC CURRENT GAIN
I
C
, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain Figure 4. “ON” Voltages
1.0E−01 1.0E+00 1.0E+01
10
0.01
0.1
V, VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
Figure 5. “ON” Voltages
1.0E+01
1.0E+00
1.0E−02
1.0E−01
V, VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
Figure 6. V
BE
(
on
)
Voltage
0.1 10
1.2
0
0.4
V, VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
0.8
1
1
0.05
0.15
0.2
0.25
I
C
= 3.0 A
1.2 A
0.8 A
0.5 A
0.25 A
T
A
= 150C
25C
−55C
V
CE
= 1.0 V
0.1 1 10
1000
10
100
h
FE
, DC CURRENT GAIN
I
C
, COLLECTOR CURRENT (A)
T
A
= 150C
25C
−55C
V
CE
= 4.0 V
1
V
BE(sat)
V
CE(sat)
I
C
/I
B
= 10
1.0E+001.0E−01
V
BE(sat)
V
CE(sat)
I
C
/I
B
= 50
0.2
0.6
1
T
A
= 155C
25C
−55C
P1-P3P4-P5

NSB9435T1G

Mfr. #:
Buy NSB9435T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased SS SOT233 BR XSTR PNP
Lifecycle:
New from this manufacturer.
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