OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

HFA1112IB

P1-P3P4-P6P7-P9P10-P12P13-P14
10
FIGURE 27. 2nd HARMONIC DISTORTION vs P
OUT
FIGURE 28. 3rd HARMONIC DISTORTION vs P
OUT
FIGURE 29. 2nd HARMONIC DISTORTION vs P
OUT
FIGURE 30. 3rd HARMONIC DISTORTION vs P
OUT
FIGURE 31. INTEGRAL LINEARITY ERROR FIGURE 32. OVERSHOOT vs INPUT RISE TIME
Typical Performance Curves V
SUPPLY
= ±5V, T
A
= 25
o
C, R
L
= 100Ω, Unless Otherwise Specified (Continued)
-20
-30
-6 -3 0 3 6 9 12 15
DISTORTION (dBc)
OUTPUT POWER (dBm)
-40
-50
-60
-70
-80
-90
-100
A
V
= +1
100MHz
50MHz
30MHz
DISTORTION (dBc)
A
V
= +1
-20
-30
-6 -3 0 3 6 9 12 15
OUTPUT POWER (dBm)
-40
-50
-60
-70
-80
-90
-100
100MHz
50MHz
30MHz
DISTORTION (dBc)
-20
-30
-6 -3 0 3 6 9 12 15
OUTPUT POWER (dBm)
-40
-50
-60
-70
-80
-90
-100
100MHz
50MHz
30MHz
A
V
= -1
DISTORTION (dBc)
-20
-30
-6 -3 0 3 6 9 12 15
OUTPUT POWER (dBm)
-40
-50
-60
-70
-80
-90
-100
100MHz
50MHz
30MHz
A
V
= -1
-3.0
INPUT VOLTAGE (V)
-2.0 -1.0 0 1.0 2.0 3.0
-0.04
-0.02
0
0.02
0.04
PERCENT ERROR (%)
100 300 500 700 900 1100 1300
OVERSHOOT (%)
INPUT RISE TIME (ps)
60
50
40
30
20
10
0
V
OUT
= 0.5V
A
V
= +1
A
V
= -1
A
V
= +2
HFA1112
11
FIGURE 33. OVERSHOOT vs INPUT RISE TIME FIGURE 34. OVERSHOOT vs INPUT RISE TIME
FIGURE 35. SUPPLY CURRENT vs SUPPLY VOLTAGE FIGURE 36. SUPPLY CURRENT vs TEMPERATURE
FIGURE 37. OUTPUT VOLTAGE vs TEMPERATURE FIGURE 38. INPUT NOISE CHARACTERISTICS
Typical Performance Curves V
SUPPLY
= ±5V, T
A
= 25
o
C, R
L
= 100Ω, Unless Otherwise Specified (Continued)
100 300 500 700 900 1100 1300
OVERSHOOT (%)
INPUT RISE TIME (ps)
60
50
40
30
20
10
0
V
OUT
= 1V
A
V
= +1
A
V
= -1
A
V
= +2
60
50
40
30
20
10
0
100 300 500 700 900 1100 1300
OVERSHOOT (%)
INPUT RISE TIME (ps)
V
OUT
= 2V
A
V
= +1
A
V
= -1
A
V
= +2
TOTAL SUPPLY VOLTAGE (V+ - V-, V)
22
17
15
13
11
SUPPLY CURRENT (mA)
59
9
7
5
678 10
21
20
19
6
8
10
12
14
16
18
25
24
23
22
21
20
19
18
17
16
15
-50 -25 0 25 50 75 100 125
TEMPERATURE (
o
C)
SUPPLY CURRENT (mA)
3.6
3.5
3.4
3.3
3.2
3.1
2.9
2.8
2.7
2.6
-50 -25 0 25 50 75 100 125
TEMPERATURE (
o
C)
OUTPUT VOLTAGE (V)
A
V
= -1
+V
OUT
(R
L
= 50Ω)
|-V
OUT
| (R
L
= 100Ω)
|-V
OUT
| (R
L
= 50Ω)
3.0
+V
OUT
(R
L
= 100Ω)
50
40
30
20
10
130
110
90
70
50
30
0.1 1 10 100
FREQUENCY (kHz)
NOISE VOLTAGE (nV/√Hz)
0
NOISE CURRENT (pA/√Hz)
E
NI
I
NI
HFA1112
12
Die Characteristics
DIE DIMENSIONS
63 mils x 44 mils x 19 mils
1600µm x 1130µm 483µm
METALLIZATION
Type: Metal 1: AlCu (2%)/TiW
Thickness: Metal 1: 8kÅ ±0.4kÅ
Type: Metal 2: AlCu (2%)
Thickness: Metal 2: 16k
Å ±0.8kÅ
PASSIVATION
Type: Nitride
Thickness: 4kÅ ±0.5kÅ
TRANSISTOR COUNT
52
SUBSTRATE POTENTIAL (POWERED UP)
Floating (Recommend Connection to V-)
Metallization Mask Layouts
HFA1112
NC
V-
NC
NC
OUT
+IN
-IN
NC
V+
HFA1112
P1-P3P4-P6P7-P9P10-P12P13-P14

HFA1112IB

Mfr. #:
Buy HFA1112IB
Manufacturer:
Renesas / Intersil
Description:
IC BUFFER 1 CIRCUIT 8SOIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet