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CDBQR0130L

P1-P3P4-P4
CDBQR0130L
Page 1
QW-A1128
REV:B
Comchip Technology CO., LTD.
A
mA
V
V
1
100
30
35
IO
VR
VRRM
IFSM
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
O
C
O
C
+125
+125
-40
TSTG
Tj
Storage temperature
Junction temperature
Average forward current
Reverse voltage
Repetitive peak reverse voltage
Forward current,surge peak
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
uA
V
10
0.35
IR
VF
Reverse current
Forward voltage
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
VR = 10 V
IF = 10 mA
O
Maximum Rating (at TA=25 C unless otherwise noted)
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
0.041(1.05)
0.037(0.95)
0.026(0.65)
0.022(0.55)
Dimensions in inches and (millimeter)
0.020(0.50) Typ.
0.022(0.55)
0.018(0.45)
0.012(0.30) Typ.
SMD Schottky Barrier Diode
0402/SOD-923F
Features
-Low forward voltage.
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
Mechanical data
-Case: 0402/SOD-923F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking Code: Cathode band & BP
-Mounting position: Any.
-Weight: 0.001 gram(approx.).
Io = 100 mA
VR = 30 Volts
RoHS Device
RATING AND CHARACTERISTIC CURVES (CDBQR0130L)
Page 2
QW-A1128
REV:B
Comchip Technology CO., LTD.
Forward voltage (mV)
260
230
270
250
280
240
AVG:2 41mV
O
Ta=25 C
IF=10mA
n=30pcs
Fig. 5 - VF Dispersion map
Reverse current (uA)
30
0
40
20
50
10
AVG:4 .2 uA
5
15
25
35
45
Fig. 6 - IR Dispersion map
Capacitance between
terminals(pF)
26
20
28
24
30
22
AVG:2 2.8 pF
21
23
25
27
29
Fig. 7 - CT Dispersion map
O
Ta=25 C
F=1MHz
VR=0V
n=10pcs
O
Ta=25 C
VR=10V
n=30pcs
0 1510 20
1
10
100
5
25
30
Capacitance between terminals (PF)
Reverse voltage (V)
Fig.3 - Capacitance between
terminals characteristics
f = 1 MHz
Ta = 25
C
1u
10n
10u
100n
0 10 20 25
30
1m
100u
15
5
Reverse voltage (V)
Fig. 2 - Reverse characteristics
Reverse current ( A )
O
25 C
O
75 C
O
-25 C
0.2 0.40
1
100
0.5
0
0.8
1000
0.6
0.3
0.1 0.7
10
Forward current (mA )
Forward voltage (V)
Fig. 1 - Forward characteristics
0
20
40
60
80
100
0 25 50
75
100 125
O
Ambient temperature ( C)
Average forward current(%)
Fig.4 - Current derating curve
O
-
25
C
O
2
5
C
O
7
5
C
O
1
2
5
C
SMD Schottky Barrier Diode
Page 3
QW-A1128
REV:B
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
B
C
d
D D
2
D
1
E F P P
0
P
1
T
SYMBOL
A
W W
1
(mm)
(inch)
0.026 0.004± 0.045 0.004± 0.024 0.004± 0.061 + 0.004
7.008 0.04±
2.362 MIN.
0.512 0.008±
SYMBOL
(mm)
(inch)
0.069 0.004± 0.138 0.002±
0.157 0.004± 0.157 0.004±
0.079 0.004± 0.009 0.002± 0.315 0.008±
0.531 MAX.
0.75 0.10±
1.15 0.10±
4.00 0.10±
1.55 + 0.10
3.50 0.05±1.75 0.10±
60.0 MIN. 13.0 0.20±0.60 0.10±
4.00 0.10± 2.00 0.10± 0.22 0.05±
8.00 0.20±
13.5 MAX.
178 1±
0402
(SOD-923F)
0402
(SOD-923F)
Reel Taping Specification
o
1
2
0
Trailer Device Leader
10 pitches (min)10 pitches (min)
.......
.......
....... ..............
....... ..............
End
Start
D1
D2
D
W1
T
C
Direction of Feed
Index hole
d
E
F
B
W
P
P0
P1
A
Polarity
P1-P3P4-P4

CDBQR0130L

Mfr. #:
Buy CDBQR0130L
Manufacturer:
Comchip Technology
Description:
Schottky Diodes & Rectifiers LOW VF DFN 100mA 0V Sm. Sgnl. Schottky
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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