TC74AC14F(EL,F) Datasheet TC74AC14F(EL,F), TC74AC14FTEL | P1-P3

TC74AC14P/F/FT

2014-03-01

1

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC74AC14P, TC74AC14F, TC74AC14FT

Hex Schmitt Inverter

The TC74AC14 is an advanced high speed CMOS SCHMITT

INVERTER fabricated with silicon gate and double-layer metal

wiring C

2

MOS technology.

It achieves the high speed operation similar to equivalent

Bipolar Schottky TTL while maintaining the CMOS low pwer

dissipation.

Pin configuration and function are the same as the TC74AC04

but the inputs have hysteresis and with its schmitt trigger

function, the TC74AC14 can be used as a line receivers which

will receive slow input signals.

All inputs are equipped with protection circuits against static

discharge or transient excess voltage.

Features

• High speed: t

pd

= 5.3 ns (typ.) at V

CC

= 5 V

• Low power dissipation: I

CC

= 4 μA (max) at Ta = 25°C

• Symmetrical output impedance: |I

OH

| = I

OL

= 24 mA (min)

Capability of driving 50 Ω

transmission lines.

• Balanced propagation delays: t

pLH

∼

−

t

pHL

• Wide operating voltage range: V

CC (opr)

= 2 to 5.5 V

• Pin and function compatible with 74F14

TC74AC14P

TC74AC14F

TC74AC14FT

Weight

DIP14-P-300-2.54 : 0.96 g (typ.)

SOP14-P-300-1.27A : 0.18 g (typ.)

TSSOP14-P-0044-0.65A : 0.06 g (typ.)

Start of commercial production

1988-10

TC74AC14P/F/FT

2014-03-01

2

Pin Assignment IEC Logic Symbol

Truth Table

A Y

L H

H L

System Diagram, Waveform

Absolute Maximum Ratings (Note 1)

Characteristics Symbol Rating Unit

Supply voltage range V

CC

−0.5 to 7.0 V

DC input voltage V

IN

−0.5 to V

CC

+ 0.5 V

DC output voltage V

OUT

−0.5 to V

CC

+ 0.5 V

Input diode current I

IK

±20 mA

Output diode current I

OK

±50 mA

DC output current I

OUT

±50 mA

DC V

CC

/ground current I

CC

±150 mA

Power dissipation P

D

500 (DIP) (Note 2)/180 (SOP/TSSOP) mW

Storage temperature T

stg

−65 to 150 °C

Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or

even destruction.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C should be

applied up to 300 mW.

1A

2A

3A

4A

5A

6A

(1)

(3)

(5)

(9)

(11)

(13)

1Y

2Y

3Y

4Y

5Y

6Y

(2)

(4)

(6)

(8)

(10)

(12)

V

CC

9

6A

6Y

5A

8

14

13

12

11

10

1A

1

2

3

4

5

6

7

2Y

3A

3Y

GND

5Y

4A

4Y

(top view)

1Y

2A

V

N

V

H

Y

V

P

A

V

IN

(A)

V

OUT

(Y)

TC74AC14P/F/FT

2014-03-01

3

Operating Ranges (Note)

Characteristics Symbol Rating Unit

Supply voltage V

CC

2.0 to 5.5 V

Input voltage V

IN

0 to V

CC

V

Output voltage V

OUT

0 to V

CC

V

Operating temperature T

opr

−40 to 85 °C

Note: The operating ranges must be maintained to ensure the normal operation of the device.

Unused inputs must be tied to either V

CC

or GND.

Electrical Characteristics

DC Characteristics

Test Condition Ta = 25°C

Ta =

−40 to 85°C

Characteristics Symbol

V

CC

(V)

Min Typ. Max Min Max

Unit

Positive threshold

voltage

V

P

―

3.0

4.5

5.5

―

2.2

3.2

3.9

―

2.2

3.2

3.9

V

Negative threshold

voltage

V

N

―

3.0

4.5

5.5

0.5

0.9

1.1

―

0.5

0.9

1.1

―

V

Hysteresis voltage V

H

―

3.0

4.5

5.5

0.3

0.4

0.5

―

1.2

1.4

1.6

0.3

0.4

0.5

1.2

1.4

1.6

V

I

OH

= −50 μA

2.0

3.0

4.5

1.9

2.9

4.4

2.0

3.0

4.5

―

1.9

2.9

4.4

―

High-level output

voltage

V

OH

V

IN

= V

IL

I

OH

= −4 mA

I

OH

= −24 mA

I

OH

= −75 mA (Note)

3.0

4.5

5.5

2.58

3.94

―

2.48

3.80

3.85

―

V

I

OL

= 50 μA

2.0

3.0

4.5

―

0.0

0.1

―

0.1

Low-level output

voltage

V

OL

V

IN

= V

IH

I

OL

= 12 mA

I

OL

= 24 mA

I

OL

= 75 mA (Note)

3.0

4.5

5.5

―

0.36

―

0.44

1.65

V

Input leakage

current

I

IN

V

IN

= V

CC

or GND 5.5 ― ― ±0.1 ― ±1.0 μA

Quiescent supply

current

I

CC

V

IN

= V

CC

or GND 5.5 ― ― 4.0 ― 40.0 μA

Note: This spec indicates the capability of driving 50 Ω transmission lines.

One output should be tested at a time for a 10 ms maximum duration.

TC74AC14F(EL,F)

TC74AC14F(EL,F)

Products related to this Datasheet