IXFR180N15P Datasheet IXFR180N15P | P1-P3

DS99242(01/06)

IXFR 180N15P V

DSS

= 150 V

I

D25

= 100 A

R

DS(on)

≤≤

≤ 13 m

ΩΩ

Ω

t

rr

≤≤

≤ 200 ns

Symbol Test Conditions Characteristic Values

(T

J

= 25° C, unless otherwise specified) Min. Typ. Max.

V

DSS

V

GS

= 0 V, I

D

= 250 µA 150 V

V

GS(th)

V

DS

= V

GS

, I

D

= 4 mA 2.5 5.0 V

I

GSS

V

GS

= ±20 V

DC

, V

DS

= 0 ±100 nA

I

DSS

V

DS

= V

DSS,

V

GS

= 0 V 25 µA

T

J

= 150° C 1.5 mA

R

DS(on)

V

GS

= 10 V, I

D

= I

T

, Note 1 13 mΩ

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25° C to 175° C 150 V

V

DGR

T

J

= 25° C to 175° C; R

GS

= 1 MΩ 150 V

V

GSS

Continuous ±20 V

V

GSM

Transient ±30 V

I

D25

T

C

= 25° C 100 A

I

D(RMS)

External Lead current limit 75 A

I

DM

T

C

= 25° C, pulse width limited by T

JM

380 A

I

AR

T

C

= 25° C60A

E

AR

T

C

= 25° C 100 mJ

E

AS

T

C

= 25° C4J

dv/dt I

S

≤ I

DM

, di/dt ≤ 100 A/µs, V

DD

≤ V

DSS

, 10 V/ns

T

J

≤ 150° C, R

G

= 4 Ω

P

D

T

C

= 25° C 300 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.062 in.) from case for 10 s 300 °C

V

ISOL

50/60 Hz, RMS, 1 minute 2500 V~

F

d

Mounting force 20..120 / 4.5..26 N/lb

Weight 5g

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

PolarHV

TM

HiPerFET

Power MOSFET

ISOPLUS247

TM

(Electrically Isolated Back Surface)

G = Gate D = Drain

S = Source

ISOLATED TAB

G

D

S

ISOPLUS247 (IXFR)

E153432

Features

l

International standard isolated

package

l

UL recognized package

l

Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

l

Unclamped Inductive Switching (UIS)

rated

l

Low package inductance

- easy to drive and to protect

l

Fast intrinsic diode

Advantages

l

Easy to mount

l

Space savings

l

High power density

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFR 180N15P

Symbol Test Conditions Characteristic Values

(T

J

= 25° C, unless otherwise specified)

Min. Typ. Max.

g

fs

V

DS

= 10 V; I

D

= I

T

, Notes 1, 2 55 86 S

C

iss

7000 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 2250 pF

C

rss

515 pF

t

d(on)

30 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 60A 32 ns

t

d(off)

R

G

= 3.3 Ω (External) 150 ns

t

f

36 ns

Q

g(on)

240 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= I

T

55 nC

Q

gd

140 nC

R

thJC

0.5 ° C/W

R

thCS

0.15 ° C/W

Source-Drain Diode Characteristic Values

(T

J

= 25° C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

I

S

V

GS

= 0 V 180 A

I

SM

Repetitive 380 A

V

SD

I

F

= I

S

, V

GS

= 0 V, Note 1 1.5 V

t

rr

I

F

= 25A, -di/dt = 100 A/µs 200 ns

Q

RM

V

R

= 100V, V

GS

= 0V 0.6 µC

I

RM

6A

ISOPLUS247 Outline

Notes:

1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %;

2. Test current I

T

= 90 A.

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2

IXFR 180N15P

Fig. 2. Extended Output Characteristics

@ 25

º

C

0

40

80

120

160

200

240

280

320

012345678910

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

7V

6V

8V

9V

Fig. 3. Output Characte ris tics

@ 150

º

C

0

20

40

60

80

100

120

140

160

180

0 0.5 1 1.5 2 2.5 3 3.5 4

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

9V

5V

6V

7V

8

Fig. 1. Output Characteristics

@ 25

º

C

0

20

40

60

80

100

120

140

160

180

00.40.81.21.62

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

6

9V

Fig. 4. R

DS(on

)

Norm alized to I

D

= 90A

Value vs. Junction Temperature

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

R

D S ( o n )

- Normalized

I

D

= 180A

I

D

= 90A

V

GS

= 10V

Fig. 5. R

DS(on)

Norm alized to I

D

= 90A

Value vs. Drain Curre nt

0.7

1

1.3

1.6

1.9

2.2

2.5

2.8

3.1

3.4

0 50 100 150 200 250 300 350

I

D

- Amperes

R

D S ( o n )

- Normalized

T

J

= 25

º

C

V

GS

= 10V

T

J

= 175

º

C

V

GS

= 15V

Fig. 6. Drain Curre nt vs . Case

Tem perature

0

10

20

30

40

50

60

70

80

90

-50 -25 0 25 50 75 100 125 150 175

T

C

- Degrees Centigrade

I

D

- Amperes

External Lead Current Limit

IXFR180N15P

IXFR180N15P

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