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MC74VHC1G02DTT1

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2016
April, 2016 − Rev. 18
1 Publication Order Number:
MC74VHC1G02/D
MC74VHC1G02
Single 2-Input NOR Gate
The MC74VHC1G02 is an advanced high speed CMOS 2−input
NOR gate fabricated with silicon gate CMOS technology.
The internal circuit is composed of multiple stages, including a
buffer output which provides high noise immunity and stable output.
The MC74VHC1G02 input structure provides protection when
voltages up to 7 V are applied, regardless of the supply voltage. This
allows the MC74VHC1G02 to be used to interface 5 V circuits to 3 V
circuits.
Features
• High Speed: t
PD
= 3 ns (Typ) at V
CC
= 5 V
• Low Power Dissipation: I
CC
= 1.0 mA (Max) at T
A
= 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 56
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
51
2
43
V
CC
IN B
IN A
OUT Y
GND
IN A
IN B
OUT Y
1
Figure 1. Pinout (Top View)
Figure 2. Logic Symbol
L
L
H
H
L
H
L
H
FUNCTION TABLE
Inputs Output
AB
H
L
L
L
Y
PIN ASSIGNMENT
1
2
3 GND
IN B
IN A
4
5V
CC
OUT Y
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See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAMS
SC70−5/SC−88A/SOT−353
DF SUFFIX
CASE 419A
SOT23−5/TSOP−5/SC59−5
DT SUFFIX
CASE 483
1
1
1
5
V3 M G
G
1
5
V3M G
M
G
V3 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
MC74VHC1G02
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2
MAXIMUM RATINGS
Symbol Characteristics Value Unit
V
CC
DC Supply Voltage −0.5 to +7.0 V
V
IN
DC Input Voltage −0.5 to +7.0 V
V
OUT
DC Output Voltage V
CC
= 0
High or Low State
−0.5 to 7.0
−0.5 to V
CC
+ 0.5
V
I
IK
Input Diode Current −20 mA
I
OK
Output Diode Current V
OUT
< GND; V
OUT
> V
CC
+20 mA
I
OUT
DC Output Current, per Pin +25 mA
I
CC
DC Supply Current, V
CC
and GND +50 mA
P
D
Power Dissipation in Still Air at 85°C SC70−5/SC−88A
TSOP−5
150
200
mW
q
JA
Thermal Resistance SC70−5/SC−88A (Note 1)
TSOP−5
350
230
°C/W
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature Under Bias )150 °C
T
STG
Storage Temperature Range *65 to )150 °C
V
ESD
ESD Withstand Voltage Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
> 2000
> 200
N/A
V
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 5) $500 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Characteristics Min Max Unit
V
CC
DC Supply Voltage 2.0 5.5 V
V
IN
DC Input Voltage 0.0 5.5 V
V
OUT
DC Output Voltage 0.0 V
CC
V
T
A
Operating Temperature Range −55 +125 °C
t
r
, t
f
Input Rise and Fall Time V
CC
= 3.3 V $ 0.3 V
V
CC
= 5.0 V $ 0.5 V
0
0
100
20
ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
Time, Hours Time, Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
1
1 10 100
1000
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature
NORMALIZED FAILURE RATE
TIME, YEARS
T
J
= 130°C
T
J
= 120°C
T
J
= 110°C
T
J
= 100°C
T
J
= 90°C
T
J
= 80°C
MC74VHC1G02
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3
DC ELECTRICAL CHARACTERISTICS
Symbo
l
Parameter Test Conditions
V
CC
(V)
T
A
= 25°C T
A
≤ 85°C −55 ≤ T
A
≤ 125°C
Uni
t
Min Typ Max Min Max Min Max
V
IH
Minimum High−Level
Input Voltage
2.0
3.0
4.5
5.5
1.5
2.1
3.15
3.85
1.5
2.1
3.15
3.85
1.5
2.1
3.15
3.85
V
V
IL
Maximum Low−Level
Input Voltage
2.0
3.0
4.5
5.5
0.5
0.9
1.35
1.65
0.5
0.9
1.35
1.65
0.5
0.9
1.35
1.65
V
V
OH
Minimum High−Level
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OH
= −50 mA
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
1.9
2.9
4.4
1.9
2.9
4.4
V
V
IN
= V
IH
or V
IL
I
OH
= −4 mA
I
OH
= −8 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
V
V
OL
Maximum Low−Level
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OL
= 50 mA
2.0
3.0
4.5
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
= V
IH
or V
IL
I
OL
= 4 mA
I
OL
= 8 mA
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
V
I
IN
Maximum Input
Leakage Current
V
IN
= 5.5 V or GND 0 to
5.5
$0.1 $1.0 $1.0
mA
I
CC
Maximum Quiescent
Supply Current
V
IN
= V
CC
or GND 5.5 1.0 10 40
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS Input t
r
= t
f
= 3.0 ns
Symbo
l
Parameter Test Conditions
T
A
= 25°C T
A
≤ 85°C −55 ≤ T
A
≤ 125°C
Uni
t
Min Typ Max Min Max Min Max
t
PLH
,
t
PHL
Maximum Propagation
Delay,
Input A or B to Y
V
CC
= 3.3 $ 0.3 V C
L
= 15 pF
C
L
= 50 pF
4.0
5.4
7.9
11.4
9.5
13.0
11.0
15.5
ns
V
CC
= 5.0 $ 0.5 V C
L
= 15 pF
C
L
= 50 pF
3.0
3.8
5.5
7.5
6.5
8.5
8.0
10.0
C
IN
Maximum Input
Capacitance
5.5 10 10 10 pF
C
PD
Power Dissipation Capacitance (Note 6)
Typical @ 25°C, V
CC
= 5.0 V
pF
11
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load dynamic
power consumption; P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC
.
P1-P3P4-P6

MC74VHC1G02DTT1

Mfr. #:
Buy MC74VHC1G02DTT1
Manufacturer:
ON Semiconductor
Description:
IC GATE NOR 1CH 2-INP 5TSOP
Lifecycle:
New from this manufacturer.
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