PMEGXX05ET_SER_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 13 January 2010 3 of 12
NXP Semiconductors
PMEGxx05ET series
0.5 A very low V
F
MEGA Schottky barrier rectifiers in SOT23 package
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
[1] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating will be available on request.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Table 5. Marking codes
Type number Marking code
[1]
PMEG2005ET P3*
PMEG3005ET P4*
PMEG4005ET P5*
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage
PMEG2005ET - 20 V
PMEG3005ET - 30 V
PMEG4005ET - 40 V
I
F
forward current - 0.5 A
I
FRM
repetitive peak forward current t
p
≤ 1 ms; δ≤0.5 - 3.9 A
I
FSM
non-repetitive peak forward
current
t
p
= 8 ms square
wave
[1]
-10A
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 280 mW
[2]
- 420 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1][2]
--440K/W
[1][3]
--300K/W
