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NTMS4404NR2

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1 Publication Order Number:
NTMS4404N/D
NTMS4404N
Power MOSFET
30 V, 12 A, Single N−Channel, SO−8
Features
• High Density Power MOSFET with Ultra Low R
DS(on)
for Higher
Efficiency
• Miniature SO−8 Surface Mount Package Saving Board Space
• I
DSS
Specified at Elevated Temperature
• Diode Exhibits High Speed, Soft Recovery
Applications
• Power Management for Battery Power Products
• Portable Products
• Computers, Printers, PCMCIA Cards
• Cell Phones, Cordless Telephones
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
$20 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
9.6
A
T
A
= 70°C 7.6
tp v10 s T
A
= 25°C 12
Power Dissipation
(Note 1)
Steady State
P
D
1.56
W
tp v10 s 2.5
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25°C
I
D
7.0
A
T
A
= 70°C 5.6
Power Dissipation
(Note 2)
T
A
= 25°C P
D
0.83 W
Pulsed Drain Current
tp = 10 ms, DC = 2 %
I
DM
50 A
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Source Current (Body Diode) I
S
6.0 A
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 20 V, V
GS
= 5 V, I
PK
= 7.25 A,
L = 19 mH, R
G
= 25 W)
E
AS
500 mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
80
°C/W
Junction−to−Ambient – t = 1 0 s (Note 1)
R
q
JA
50
Junction−to−Ambient – Steady State (Note 2)
R
q
JA
150
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad
size (Cu area = 0.412 in sq.)
G
D
S
Device Package Shipping
†
ORDERING INFORMATION
NTMS4404NR2 SO−8 2500/Tape & Reel
http://onsemi.com
30 V
15.5 mW @ 4.5 V
9.7 mW @ 10 V
R
DS(on)
TYP
12 A
I
D
MAXV
(BR)DSS
SO−8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
E4404N
LYWW
E4404N = Device Code
L = Assembly Location
Y = Year
WW = Work Week
18
Drain
Drain
Drain
Drain
Source
Source
Source
Gate
Top View
N−Channel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTMS4404N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
25 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V, V
DS
= 30 V
T
J
= 25°C 1.0 mA
T
J
= 100°C 5.0
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= $20 V $100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.0 2.2 3.0 V
Gate Threshold Temperature Coefficient V
GS(TH)
/T
J
−5.0 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V, I
D
= 12 A 9.7 11.5 mW
V
GS
= 4.5 V, I
D
= 6.0 A 15.5 17.5
Forward Transconductance g
FS
V
DS
= 15 V, I
D
= 12 A 17.5 S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 24 V
1975 2500
pF
Output Capacitance C
OSS
575 750
Reverse Transfer Capacitance C
RSS
180 300
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 24 V, I
D
= 12 A
50 70
nC
Threshold Gate Charge Q
G(TH)
2.4
Gate−to−Source Charge Q
GS
7.5
Gate−to−Drain Charge Q
GD
16
SWITCHING CHARACTERISTICS, V
GS
= 10 V (Note 4)
Turn−On Delay Time
t
d(ON)
V
GS
= 10 V, V
DS
= 24 V, I
D
= 12 A,
R
G
= 2.5 W
15 25
ns
Rise Time tr 25 50
Turn−Off Delay Time t
d(OFF)
35 55
Fall Time t
f
15 30
SWITCHING CHARACTERISTICS, V
GS
= 4.5 V (Note 4)
Turn−On Delay Time t
d(ON)
V
GS
= 4.5 V, V
DS
= 24 V, I
D
= 6.0 A,
R
G
= 2.5 W
20
ns
Rise Time tr 80
Turn−Off Delay Time t
d(OFF)
25
Fall Time t
f
15
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 4)
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
S
= 6.0 A
T
J
= 25°C 0.80 1.1
V
T
J
= 125°C 0.65
Reverse Recovery Time t
RR
V
GS
= 0 V, d
ISD
/d
t
= 100 A/ms,
I
S
= 6.0 A
40 55
ns
Charge Time t
a
23
Discharge Time tb 17
Reverse Recovery Charge Q
RR
0.05
mC
NOTES:
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTMS4404N
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
T
J
= 100°C
0
16
62
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
12
4
0
Figure 1. On−Region Characteristics
23
16
12
4
6
0
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.01
46
0.02
0
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
I
D,
DRAIN CURRENT (AMPS)
14
24
0.01
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D,
DRAIN CURRENT (AMPS)
−50 0−25 25
1.4
1.2
1
0.8
0.6
50 150
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
0.05
35
T
J
= −55°C
I
D
= 12 A
T
J
= 25°C
0.025
0
75
T
J
= 25°C
I
D
= 12 A
V
GS
= 10 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
4
T
J
= 25°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
1.6
V
GS
= 10 V
210
10
25
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
15
V
GS
= 0 V
I
DSS
, LEAKAGE (A)
T
J
= 150°C
T
J
= 100°C
3.0 V
3.2 V
0.02
V
GS
= 4.5 V
100
1000
10000
10
4 V
V
DS
≥ 10 V
0.04
16 18 20
0.015
10 20
3.8 V
8
3.4 V
8
4
798
68
10 12
30
24
20
3.6 V
V
GS
= 10 V to 4.2 V
20
24
0.03
22
0.005
125100 5
8
5
P1-P3P4-P6

NTMS4404NR2

Mfr. #:
Buy NTMS4404NR2
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 30V 7A 8-SOIC
Lifecycle:
New from this manufacturer.
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