2PD601AXL_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 6 November 2008 3 of 9
NXP Semiconductors
2PD601ARL; 2PD601ASL
50 V, 100 mA NPN general-purpose transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 60 V
V
CEO
collector-emitter voltage open base - 50 V
V
EBO
emitter-base voltage open collector - 6 V
I
C
collector current - 100 mA
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- 200 mA
I
BM
peak base current single pulse;
t
p
≤ 1ms
- 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 250 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −55 +150 °C
T
stg
storage temperature −65 +150 °C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from junction
to ambient
in free air
[1]
- - 500 K/W
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off current V
CB
=60V; I
E
=0A--10nA
V
CB
=60V;I
E
=0A;
T
j
= 150 °C
--5µA
I
EBO
emitter-base cut-off current V
EB
=5V; I
C
=0A --10nA
h
FE
DC current gain V
CE
=2V;
I
C
= 100 mA
[1]
90 - -
h
FE
group R V
CE
=10V;
I
C
=2mA
210 - 340
h
FE
group S V
CE
=10V;
I
C
=2mA
290 - 460
