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VS-81RIA80M

P1-P3P4-P6P7-P8
VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Mar-14
4
Document Number: 94392
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
80
90
100
110
120
130
0 102030405060708090
Maximum Allowable Case Temperature (°C)
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Angle
80RIA Se ries
R (DC) = 0.30 K/W
thJC
70
80
90
100
110
120
130
020406080100120140
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
80RIA Series
R (DC) = 0.30 K/W
thJC
0255075100125
Maximum Allowable Ambient Temperature (°C)
0
.
6
K
/
W
1
K
/
W
2
K
/
W
5
K
/
W
3
K
/
W
1
.
4
K
/
W
R
=
0
.
4K
/
W
-
D
e
l
t
a
R
t
h
S
A
0
10
20
30
40
50
60
70
80
90
100
110
120
0
10 20 30 40 50 60 70 80
180°
120°
90°
60°
30°
RM S Lim it
Conduction Angle
Maximum Average On-st ate Power Loss (W)
Average On-state Current (A)
80RIA Series
T = 125°C
J
0255075100125
Maximum Allowable Ambient Temperature (°C)
R
=
0
.
4
K
/
W
-
D
e
l
t
a
R
t
h
S
A
0
.
6
K
/
W
1
K
/
W
1
.
4
K
/
W
2
K
/
W
3
K
/
W
5
K
/
W
0
20
40
60
80
100
120
140
160
180
0 20406080100120140
DC
180°
120°
90°
60°
30°
RM S Li m it
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
80RIA Series
T = 125°C
J
VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Mar-14
5
Document Number: 94392
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
800
1000
1200
1400
1600
1800
110100
Number Of Equa l Amplitude Half Cyc le Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
80RIA Series
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Initial T
J
= 125°C
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
0.01 0.1 1
Pulse Tra in Dura t io n ( s)
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Peak Half Sine Wave On-state Current (A)
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
80RIA Series
Maximum Non Repetitive Surge Current
1
10
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
T = 25°C
J
Instantaneous On-state Current (A)
In st a n t a n e o u s O n - st a t e V o lt a g e ( V )
T = 125°C
J
80RIA Series
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
thJC
80RIA Series
Steady State Value
R = 0.30 K/W
(DC Operation)
Transient Thermal Impedance Z (K/W)
thJC
VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Mar-14
6
Document Number: 94392
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95362
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
VGD
IGD
(b)
(a)
Tj=25 °C
Tj=125 °C
Tj=-40 °C
(1) (2)
(3)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
Frequency Limited by PG(AV)
tr<=1 µs
rated di/dt : 20V, 30ohms; tr<=0.5 µs
<=30% rated di/dt : 20V, 65ohms
(1) PGM = 100W, tp = 500µs
(2) PGM = 50W, tp = 1ms
(3) PGM = 20W, tp = 2.5ms
(4) PGM = 10W, tp = 5ms
Device: 80RIA Series
(4)
-I
TAV
x 10 A
3
- RIA = Essential part number4
6
7
- Voltage code x 100 = V
RRM
(see Voltage Ratings table)
5
-
None = Stud base 1/2"-20UNF- 2 A threads
M = Stud base metric threads M12 x 1.75 E 6
2
-
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
2 = Flag terminals (gate and auxiliary cathode terminals)
Device code
51 32 4 6 7
8 0 RIA 120 M PbFVS-
1 - Vishay Semiconductors product
- None = Standard production
- PbF = Lead (Pb)-free
P1-P3P4-P6P7-P8

VS-81RIA80M

Mfr. #:
Buy VS-81RIA80M
Manufacturer:
Vishay Semiconductors
Description:
SCRs Thyristors - TO-83/94 BRA SQ-e3
Lifecycle:
New from this manufacturer.
Delivery:
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