BAP51-06W_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 26 May 2008 2 of 8
NXP Semiconductors
BAP51-06W
General purpose PIN diode
4. Marking
5. Limiting values
6. Thermal characteristics
7. Characteristics
Table 3. Marking
Type number Marking Description
BAP51-06W W7* * = p: made in Hong Kong
* = t : made in Malaysia
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
V
R
reverse voltage - 50 V
I
F
forward current - 50 mA
P
tot
total power dissipation T
sp
=90°C - 240 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature −65 +150 °C
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction
to solder point
250 K/W
Table 6. Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage I
F
= 50 mA - 0.95 1.1 V
I
R
reverse current V
R
= 50 V - - 100 nA
C
d
diode capacitance see Figure 1; f = 1 MHz
V
R
= 0 V - 0.4 - pF
V
R
= 1 V - 0.3 0.55 pF
V
R
= 5 V - 0.2 0.35 pF
r
D
diode forward resistance see Figure 2; f = 100 MHz
I
F
= 0.5 mA
[1]
- 5.3 9 Ω
I
F
=1mA
[1]
- 3.5 6.5 Ω
I
F
=10mA
[1]
- 1.5 2.5 Ω
