TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/317
T4-LDS-0057 Rev. 2 (081394) Page 1 of 2
DEVICES LEVELS
2N2369A 2N2369AUB 2N4449 JAN
2N2369AU 2N2369AUBC *
JANTX
2N2369AUA
JANTXV
JANS
* Available to JANS quality level only.
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage
2N2369A / U / UA
2N4449 / UB / UBC
V
CEO
15
20
Vdc
Emitter-Base Voltage
2N2369A / U / UA
2N4449 / UB / UBC
V
EBO
4.5
6.0
Vdc
Collector-Base Voltage V
CBO
40 Vdc
Collector-Emitter Voltage I
CES
40 Vdc
Total Power Dissipation @
T
A
= +25°C
2N2369A; 2N4449
UA, UB, UBC
U
P
T
0.36
(1)
0.36
(1, 5)
0.50
(4)
W
Operating & Storage Junction Temperature Range T
op
, T
stg
-65 to +200 °C
THERMAL CHARACTERISTICS
Parameters / Test Conditions Symbol Value Unit
Thermal Resistance, Ambient-to-Case
2N2369A; 2N4449
UA, UB, UBC
U
R
θJA
400
400
(5)
350
°C/W
Note:
1. Derate linearly 2.06 mW°/C above T
A
= +25°C.
2. Derate linearly 4.76 mW°/C above T
C
= +95°C.
3. Derate linearly 3.08 mW°/C above T
C
= +70°C.
4. Derate linearly 3.44 mW°/C above T
A
= +54.5°C.
5. Mounted on FR-4 PCB (1Oz. Cu) with contacts 20 mils larger than package pads.
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
V
(BR)CEO
15
Vdc
Collector-Base Cutoff Current
V
CE
= 20Vdc
I
CES
0.4
μAdc
TO-18 (TO-206AA)
2N2369A
TO-46 (TO-206AB)
2N4449
SURFACE MOUNT
UA
SURFACE MOUNT
UB & UBC
(UBC = Ceramic Lid Version)
SURFACE MOUNT
U (Dual Transistor)
