RN1407～RN1409
2014-03-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1407, RN1408, RN1409
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
z With built-in bias resistors
z Simplified circuit design
z Reduce a quantity of parts and manufacturing process
z Complementary to RN2407 to RN2409
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Collector-base voltage RN1407 to 1409 V
CBO
50 V
Collector-emitter voltage RN1407 to 1409 V
CEO
50 V
RN1407 6
RN1408 7
Emitter-base voltage
RN1409
V
EBO
15
V
Collector current RN1407 to 1409 I
C
100 mA
Collector power dissipation RN1407 to 1409 P
C
200 mW
Junction temperature RN1407 to 1409 T
j
150 °C
Storage temperature range RN1407 to 1409 T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
JEDEC TO-236MOD
JEITA SC-59
TOSHIBA 2-3F1A
Weight: 0.012g (typ.)
Type No. R1 (kΩ) R2 (kΩ)
RN1407 10 47
RN1408 22 47
RN1409 47 22
Unit: mm
Start of commercial production
1985-05
