AOT260L/AOB260L
Symbol Min Typ Max Units
BV
DSS
60 V
V
DS
=60V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
Gate Threshold Voltage
2.2 2.7 3.2 V
I
D(ON)
500 A
2 2.5
J
=125°C 3.1 3.9
2.2 2.9 mΩ
1.7 2.2 mΩ
1.9 2.5 mΩ
g
FS
68 S
V
SD
0.65 1 V
I
S
140 A
C
iss
9400 11800 14200 pF
C
oss
1090 1360 1770 pF
C
rss
32 40 68 pF
R
g
0.5 1 1.5 Ω
Q
g
(10V) 120 150 180 nC
Q
gs
28 40 52 nC
Q
gd
9 15 25 nC
t
D(on)
30 ns
t
r
27 ns
t
D(off)
74 ns
t
f
12 ns
t
rr
22
32 42 ns
140
200 260
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=30V, f=1MHz
SWITCHING PARAMETERS
Body Diode Reverse Recovery Charge
I
=20A, dI/dt=500A/
s
Turn-On Rise Time
Body Diode Reverse Recovery Time
I
F
=20A, dI/dt=500A/µs
V
GS
=10V, V
DS
=30V, R
L
=1.5Ω,
R
GEN
=3Ω
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
V
GS
=10V, V
DS
=30V, I
D
=20A
Gate Source Charge
Gate Drain Charge
Turn-Off DelayTime
µA
V
DS
=V
GS
I
D
=250µA
V
DS
=0V, V
GS
= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
mΩ
V
GS
=6V, I
D
=20A
TO263
Diode Forward Voltage
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
V
GS
=10V, I
D
=20A
TO263
TO220
Forward Transconductance
V
GS
=6V, I
D
=20A
TO220
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
DSS
R
DS(ON)
Static Drain-Source On-Resistance
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C. Ratings are based on low frequency and duty cycles to keep initial
T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=175°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
Rev 1 : Jul 2011 www.aosmd.com Page 2 of 6
