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MCZ33290EFR2

P1-P3P4-P6P7-P9P10-P12
Analog Integrated Circuit Device Data
4 Freescale Semiconductor
33290
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ARCHIVE INFORMATION
ARCHIVE INFORMATION
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 2. Maximum Ratings
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or
permanent damage to the device.
Rating Symbol Value Unit
VDD DC Supply Voltage
V
DD
-0.3 to 7.0 V
VBB Load Dump Peak Voltage
V
BB(LD)
45 V
ISO Pin Load Dump Peak Voltage
(2)
V
ISO
40 V
ISO Short Circuit Current Limit
I
ISO(LIM)
1.0 A
ESD Voltage
(3)
Human Body Model
(4)
Machine Model
(4)
V
ESD1
V
ESD2
±2000
±200
V
ISO Clamp Energy
(5)
E
clamp
10 mJ
Storage Temperature
T
stg
-55 to +150 °C
Operating Case Temperature
T
C
-40 to +125 °C
Operating Junction Temperature
T
J
-40 to +150 °C
Power Dissipation
T
A
= 25°C
P
D
0.8
W
Peak Package Reflow Temperature During Reflow
(6)
,
(7)
T
PPRT
Note 7.
°C
Thermal Resistance
Junction-to-Ambient
R
θJA
150
°C/W
Notes
2. Device will survive double battery jump start conditions in typical applications for 10 minutes duration, but is not guaranteed to remain
within specified parametric limits during this duration.
3. ESD data available upon request.
4. ESD1 testing is performed in accordance with the Human Body Model (C
ZAP
= 100 pF, R
ZAP
= 1500 Ω), ESD2 testing is performed in
accordance with the Machine Model (C
ZAP
= 200 pF, R
ZAP
= 0 Ω).
5. Nonrepetitive clamping capability at 25°C.
6. Pin soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may
cause malfunction or permanent damage to the device.
7. Freescale’s Package Reflow capability meets Pb-free requirements for JEDEC standard J-STD-020C. For Peak Package Reflow
Temperature and Moisture Sensitivity Levels (MSL),
Go to www.freescale.com, search by part number [e.g. remove prefixes/suffixes and enter the core ID to view all orderable parts. (i.e.
MC33xxxD enter 33xxx), and review parametrics.
Analog Integrated Circuit Device Data
Freescale Semiconductor 5
33290
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
ARCHIVE INFORMATION
ARCHIVE INFORMATION
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions of 4.75 V ≤ V
DD
≤ 5.25 V, 8.0 V ≤ V
BB
≤ 18 V, -40°C ≤ T
C
≤ 125°C, unless otherwise
noted.
Characteristic Symbol Min Typ Max Unit
POWER AND CONTROL
V
DD
Sleep State Current
T
x
= 0.8 V
DD
, CEN = 0.3 V
DD
I
DD(SS)
– –
0.1
mA
V
DD
Quiescent Operating Current
T
x
= 0.2 V
DD
, CEN = 0.7 V
DD
I
DD(Q)
– –
1.0
mA
V
BB
Sleep State Current
V
BB
= 16 V, T
x
= 0.8 V
DD
, CEN = 0.3 V
DD
I
BB(SS)
– –
50
µA
V
BB
Quiescent Operating Current
T
X
= 0.2 V
DD
, CEN = 0.7 V
DD
I
BB(Q)
– –
1.0
mA
Chip Enable
Input High-Voltage Threshold
(8)
Input Low-Voltage Threshold
(9)
V
IH(CEN)
V
IL(CEN)
0.7 V
DD
–
–
–
–
0.3 V
DD
V
Chip Enable Pull-Down Current
(10)
I
PD(CEN)
2.0
–
40 µA
T
X
Input Low-Voltage Threshold
R
ISO
= 510 Ω
(11)
V
IL(Tx)
– –
0.3 x V
DD
V
T
X
Input High-Voltage Threshold
R
ISO
= 510 Ω
(12)
V
IH(Tx)
0.7 x V
DD
– –
V
T
X
Pull-Up Current
(13)
I
PU(Tx)
-40
–
-2.0 µA
R
X
Output Low-Voltage Threshold
R
ISO
= 510 Ω, T
X
= 0.2 V
DD
, R
x
Sinking 1.0 mA
V
OL(Rx)
– –
0.2 V
DD
V
R
X
Output High-Voltage Threshold
R
ISO
= 510 Ω, T
X
= 0.8 V
DD
, R
X
Sourcing 250 µA
V
OH(Rx)
0.8 V
DD
– –
V
Thermal Shutdown
(14)
T
LIM
150 170
–
°C
Notes
8. When IBB transitions to >100 µA.
9. When IBB transitions to <100 µA.
10. Enable pin has an internal current pull-down. Pull-down current is measured with CEN pin at 0.3 V
DD
.
11. Measured by ramping T
X
down from 0.7 V
DD
and noting T
X
value at which ISO falls below 0.2 V
BB
.
12. Measured by ramping T
X
up from 0.3 V
DD
and noting the value at which ISO rises above 0.9 V
BB
.
13. T
x
pin has internal current pull-up. Pull-up current is measured with T
X
pin at 0.7 V
DD
.
14. Thermal Shutdown performance (T
LIM
) is guaranteed by design but not production tested.
Analog Integrated Circuit Device Data
6 Freescale Semiconductor
33290
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Table 3. Static Electrical Characteristics (Continued)
Characteristics noted under conditions of 4.75 V ≤ V
DD
≤ 5.25 V, 8.0 V ≤ V
BB
≤ 18 V, -40°C ≤ T
C
≤ 125°C, unless otherwise
noted.
Characteristic Symbol Min Typ Max Unit
ISO I/O
Input Low Voltage Threshold
R
ISO
= 0 Ω, T
X
= 0.8 V
DD
(15)
V
IL(ISO)
– – 0.4 x V
BB
V
Input High Voltage Threshold
R
ISO
= 0 Ω, T
X
= 0.8 V
DD
(16)
V
IH(ISO)
0.7 x V
BB
– –
V
Input Hysteresis
(17)
V
Hys(ISO)
0.05 x V
BB
– 0.1 x V
BB
V
Internal Pull-Up Current
R
ISO
= ∞ Ω, T
X
= 0.8 V
DD
, V
ISO
= 9.0 V, V
BB
= 18 V
I
PU(ISO)
-5.0 – -140
µA
Short Circuit Current Limit
(18)
R
ISO
= 0 Ω, T
X
= 0.4 V
DD
, V
ISO
= V
BB
I
SC(ISO)
50 – 1000
mA
Output Low Voltage
R
ISO
= 510 Ω, T
X
= 0.2 V
DD
V
OL(ISO)
– – 0.1 x V
BB
V
Output High Voltage
R
ISO
= ∞ Ω, T
X
= 0.8 V
DD
V
OH(ISO)
0.95 x V
BB
– –
V
Notes
15. ISO ramped from 0.8 V
BB
to 0.4 V
BB
, Monitor R
X
, Value of ISO voltage at which R
X
transitions to 0.3 V
DD
.
16. ISO ramped from 0.4 V
BB
to 0.8 V
BB
, Monitor R
X
, Value of ISO voltage at which R
X
transitions to 0.7 V
DD
.
17. Input Hysteresis, V
Hys(ISO)
= V
IH(ISO)
- V
IL(ISO)
.
18. ISO has internal current limiting.
P1-P3P4-P6P7-P9P10-P12

MCZ33290EFR2

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Manufacturer:
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Description:
Interface - Specialized ISO LINK
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