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STPSC8065D

P1-P3P4-P6P7-P9
July 2017
DocID030730 Rev 2
1/9
This is information on a product in full production.
www.st.com
STPSC8065
650 V power Schottky silicon carbide diode
Datasheet - production data
Features
No or negligible reverse recovery
Switching behavior independent of
temperature
Dedicated to PFC applications
High forward surge capability
Operating T
j
from -40 °C to 175 °C
ECOPACK®2 compliant component
Description
The SiC diode is an ultra high performance
power Schottky diode. It is manufactured using a
silicon carbide substrate. The wide band gap
material allows the design of a Schottky diode
structure with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in PFC applications, this
ST SiC diode will boost performance in hard
switching conditions. Its high forward surge
capability ensures good robustness during
transient phases.
Table 1: Device summary
Symbol
Value
I
F(AV)
V
RRM
T
j
(max.)
V
F
(typ.)
Characteristics
STPSC8065
2/9
DocID030730 Rev 2
1 Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
650
V
I
F(RMS)
Forward rms current
22
A
I
F(AV)
Average forward current
T
C
= 150 °C
(1)
, DC current
8
A
I
FRM
Repetitive peak forward
current
T
c
= 150 °C, T
j
= 175 °C, δ = 0.1
36
A
I
FSM
Surge non repetitive forward
current
t
p
= 10 ms sinusoidal, T
c
= 25 °C
46
A
t
p
= 10 ms sinusoidal, T
c
= 125 °C
38
t
p
= 10 µs square, T
c
= 25 °C
200
T
stg
Storage temperature range
-65 to +175
°C
T
j
Operating junction temperature
(2)
-40 to +175
°C
Notes:
(1)
Value based on R
th(j-c)
max.
(2)
(dP
tot
/dT
j
) < (1/R
th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 3: Thermal parameters
Symbol
Parameter
Value
Unit
Typ.
Max.
R
th(j-c)
Junction to case
1.1
1.65
°C/W
Table 4: Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-
2
105
µA
T
j
= 150 °C
-
20
750
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 8 A
-
1.30
1.45
V
T
j
= 150 °C
-
1.45
1.65
T
j
= 175 °C
-
1.50
Notes:
(1)
Pulse test: t
p
= 5 ms, δ < 2%
(2)
Pulse test: t
p
= 500 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.95 x I
F(AV)
+ 0.087 x I
F
2
(RMS)
STPSC8065
Characteristics
DocID030730 Rev 2
3/9
Table 5: Dynamic electrical characteristics
Symbol
Parameter
Test conditions
Typ.
Unit
Q
Cj
(1)
Total capacitive charge
V
R
= 400 V
28
nC
C
j
Total capacitance
V
R
= 0 V, T
c
= 25 °C, F = 1 MHz
540
pF
V
R
= 400 V, T
c
= 25 °C, F = 1 MHz
45
Notes:
(1)
Most accurate value for the capacitive charge:
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P1-P3P4-P6P7-P9

STPSC8065D

Mfr. #:
Buy STPSC8065D
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers 650 V power Schottky silicon carbide diode
Lifecycle:
New from this manufacturer.
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