IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTR 30N25
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
V
DS
= 10 V; I
D
= I
T
Notes 2, 3 24 32 S
C
iss
3950 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 510 pF
C
rss
177 pF
t
d(on)
19 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 30A 19 ns
t
d(off)
R
G
= 3.6 Ω (External), Notes 2, 3 79 ns
t
f
17 ns
Q
g(on)
136 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
32 nC
Notes 2, 3
Q
gd
52 nC
R
thJC
0.75 K/W
R
thCK
0.15 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V 30 A
I
SM
Repetitive; Note 1 120 A
V
SD
I
F
= I
S
, V
GS
= 0 V, Notes 2, 3 1.5 V
t
rr
300 ns
Q
RM
3.0 µC
I
F
= I
S
, -di/dt = 100 A/µs, V
R
= 100 V
Note: 1. Pulse width limited by T
JM
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
3. I
T
= 15A
ISOPLUS 247 OUTLINE
