74LVT245B_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 8 May 2008 4 of 15
NXP Semiconductors
74LVT245B
3.3 V octal transceiver with direction pin (3-state)
6. Functional description
[1] H = HIGH voltage level;
L = LOW voltage level;
X = don’t care;
Z = high impedance OFF-state.
7. Limiting values
[1] Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
[2] The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150 °C.
[3] The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
[4] For SO20 packages: above 70 °C derate linearly with 8 mW/K.
For SSOP20 and TSSOP20 packages: above 60 °C derate linearly with 5.5 mW/K.
For DHVQFN20 packages: above 60 °C derate linearly with 4.5 mW/K.
Table 3. Function selection
Inputs Inputs/outputs
OE DIR An Bn
L L An = Bn inputs
L H inputs Bn = An
HXZZ
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
[1][2]
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage −0.5 +4.6 V
V
I
input voltage
[3]
−0.5 +7.0 V
V
O
output voltage output in OFF or HIGH state
[3]
−0.5 +7.0 V
I
IK
input clamping current V
I
< 0 −50 - mA
I
OK
output clamping current V
O
< 0 −50 - mA
I
O
output current output in LOW state - 128 mA
output in HIGH state −64 - mA
T
stg
storage temperature −65 +150 °C
T
j
junction temperature
[2]
- 150 °C
P
tot
total power dissipation T
amb
= −40 °C to +85 °C
[4]
- 500 mW
