August 2006 Rev 4 1/16
16
STP45NF3LL - STP45NF3LLFP
STB45NF3LL
N-channel 30V - 0.014 - 45A TO-220 - TO-220FP - D
2
PAK
STripFET II™ power MOSFET
General features
Optimal R
DS(on)
x Q
g
trade-off @ 4.5V
Conduction losses reduced
Switching losses reduced
Description
This application specific Power MOSFET is the
third genaration of STMicroelectronics unique
“Single Feature Size™” strip-based process. The
resulting transistor shows the best trade-off
between on-resistance ang gate charge. When
used as high and low side in buck regulators, it
gives the best performance in terms of both
conduction and switching losses. This is
extremely important for motherboards where fast
switching and high efficiency are of paramount
importance.
Applications
Switching application
Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
STB45NF3LL 30V <0.018 45A
STP45NF3LLFP 30V <0.018 45A
STP45NF3LL 30V <0.018 27A
D²PAK
TO-220
TO-220FP
1
2
3
1
3
1
2
3
www.st.com
Order codes
Part number Marking Package Packaging
STB11NM60FD B11NM60FD D²PAK Tape & reel
STB11NM60FD-1 B11NM60FD I²PAK Tube
STP11NM60FD P11NM60FD TO-220 Tube
Contents STP45NF3LL - STB45NF3LL
2/16
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
STP45NF3LL - STB45NF3LL Electrical ratings
3/16
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
Value Unit
TO-220/
D²PAK/I²PAK
TO-220FP
V
DS
Drain-source voltage (v
gs
= 0) 30 V
V
DGR
Drain-gate voltage (R
GS
= 20 k)30V
V
GS
Gate- source voltage ±16 V
I
D
Drain current (continuos) at T
C
= 25°C 45 27 A
I
D
Drain current (continuos) at T
C
= 100°C 32 19 A
I
DM
(1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 180 108 A
P
TOT
Total dissipation at T
C
= 25°C 70 25 W
Derating factor 0.46 0.167 W/°C
E
AS
(2)
2. Starting T
j
= 25°C, I
D
= 22.5A, V
DD
= 24V
Single pulse avalanche energy 241 mj
V
ISO
Insulation winthstand voltage (dc) -- 2500 V
T
stg
Storage temperature
– 55 to 175 °C
T
j
Max. operating junction temperature
Table 2. Thermal data
Symbol Parameter
Value
Unit
TO-220
D²PAK
TO-220FP
R
thj-case
Thermal resistance junction-case Max 2.14 6 °C/W
R
thj-a
Thermal resistance junction-ambient Max 62.5 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C

STP45NF3LL

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 30 Volt 45 Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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