NXP Semiconductors Product specification
General purpose PIN diode BAP51-02
FEATURES
• Low diode capacitance
• Low diode forward resistance.
APPLICATIONS
• General RF applications.
DESCRIPTION
General purpose PIN diode in a SOD523 ultra small SMD
plastic package.
PINNING
PIN DESCRIPTION
1 cathode
2 anode
handbook, halfpage
12
Top view
MAM405
Marking code: K1.
Fig.1 Simplified outline (SOD523) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
ELECTRICAL CHARACTERISTICS
T
j
= 25°C unless otherwise specified.
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
continuous reverse voltage − 60 V
I
F
continuous forward current − 50 mA
P
tot
total power dissipation T
s
=90°C − 715 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage I
F
=50mA − 0.95 1.1 V
V
R
reverse voltage I
R
=10µA50−−V
I
R
reverse current V
R
=50V −−100 nA
C
d
diode capacitance V
R
= 0; f = 1 MHz − 0.4 − pF
V
R
= 1 V; f = 1 MHz − 0.3 0.55 pF
V
R
= 5 V; f = 1 MHz − 0.2 0.35 pF
r
D
diode forward resistance I
F
= 0.5 mA; f = 100 MHz; note 1 − 5.5 9 Ω
I
F
= 1 mA; f = 100 MHz; note 1 − 3.6 6.5 Ω
I
F
= 10 mA; f = 100 MHz; note 1 − 1.5 2.5 Ω
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point 85 K/W
