BU406

© Semiconductor Components Industries, LLC, 2011
October, 2011 Rev. 9
1 Publication Order Number:
BU406/D
BU406, BU407
NPN Power Transistors
These devices are high voltage, high speed transistors for horizontal
deflection output stages of TV’s and CRT’s.
Features
High Voltage: V
CEV
= 330 or 400 V
Fast Switching Speed: t
f
= 750 ns (max)
Low Saturation Voltage: V
CE(sat)
= 1 V (max) @ 5 A
PbFree Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage BU406
BU407
V
CEO
200
150
Vdc
CollectorEmitter Voltage BU406
BU407
V
CEV
400
330
Vdc
CollectorBase Voltage BU406
BU407
V
CBO
400
330
Vdc
EmitterBase Voltage V
EBO
6 Vdc
Collector Current Continuous
Peak Repetitive
Peak (10 ms)
I
C
7
10
15
Adc
Base Current I
B
4 Adc
Total Device Dissipation @ T
C
= 25_C
Derate above 25°C
P
D
60
0.48
W
W/_C
Operating and Storage Junction
Temperature Storage
T
J
, T
stg
65 to 150
_C
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, JunctiontoCase
R
q
JC
2.08
_C/W
Thermal Resistance, JunctiontoAmbient
R
q
JA
70
_C/W
Maximum Lead Temperature for Soldering
Purposes1/8 from Case for 5 Seconds
T
L
260
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
NPN SILICON
POWER TRANSISTORS
7 AMPERES 60 WATTS
150 AND 200 VOLTS
TO220AB
CASE 221A09
STYLE 1
1
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MARKING DIAGRAM
BU40x = Specific Device Code
x = 6 or 7
A = Assembly Location
Y = Year
WW = Work Week
G=PbFree Package
2
3
Device Package Shipping
ORDERING INFORMATION
BU406 TO220AB 50 Units / Rail
BU406G TO220AB
(PbFree)
50 Units / Rail
BU40xG
AY WW
BU407 TO220AB 50 Units / Rail
BU407G TO220AB
(PbFree)
50 Units / Rail
BU406, BU407
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2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 1) BU406
(I
C
= 100 mAdc, I
B
= 0) BU407
V
CEO(sus)
200
150
Vdc
Collector Cutoff Current
(V
CE
= Rated V
CEV
, V
BE
= 0)
(V
CE
= Rated V
CEO
+ 50 Vdc, V
BE
= 0)
(V
CE
= Rated V
CEO
+ 50 Vdc, V
BE
= 0, T
C
= 150_C)
I
CES
5
0.1
1
mAdc
Emitter Cutoff Current BU406, BU407
(V
EB
= 6 Vdc, I
C
= 0)
I
EBO
1 mAdc
ON CHARACTERISTICS (Note 1)
CollectorEmitter Saturation Voltage
(I
C
= 5 Adc, I
B
= 0.5 Adc)
V
CE(sat)
1 Vdc
BaseEmitter Saturation Voltage
(I
C
= 5 Adc, I
B
= 0.5 Adc)
V
BE(sat)
1.2 Vdc
Forward Diode Voltage
(I
EC
= 5 Adc) “D” only
V
EC
2 Volts
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product
(I
C
= 0.5 Adc, V
CE
= 10 Vdc, f
test
= 20 MHz)
f
T
10 MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1 MHz)
C
ob
80 pF
SWITCHING CHARACTERISTICS
Inductive Load Crossover Time
(V
CC
= 40 Vdc, I
C
= 5 Adc, I
B1
= I
B2
= 0.5 Adc, L = 150 mH)
t
c
0.75
ms
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 1%.
100
0.1
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (AMPS)
10
0.2 0.3 0.5 0.7 1 5 7 10
50
20
70
30
h
FE
, DC CURRENT GAIN
T
J
= 100°C
25°C
23
V
CE
= 5 V
10
2
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1
720
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
I
C
, COLLECTOR CURRENT (AMP)
3 5 30 50 70 200
0.1
10
T
C
= 25°C
Figure 2. Maximum Rated Forward
Bias Safe Operating Area
100
BU407
BU406
dc
BU406, BU407
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3
PACKAGE DIMENSIONS
TO220
CASE 221A09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.036 0.64 0.91
F 0.142 0.161 3.61 4.09
G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
J 0.014 0.025 0.36 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
Z --- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
T
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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PUBLICATION ORDERING INFORMATION
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
BU406/D
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Sales Representative

BU406

Mfr. #:
Manufacturer:
Central Semiconductor
Description:
Bipolar Transistors - BJT NPN Trans 400Vcbo 400Vces 200Vceo 60W
Lifecycle:
New from this manufacturer.
Delivery:
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