V
CC
V
B
V
S
HO
LOCOM
HIN
LIN
LIN
HIN
up to 600 V
TO
LOAD
V
CC
Typical Connection
HALF-BRIDGE DRIVER
Features
Floating channel designed for bootstrap operation
Fully operational to +600 V
Tolerant to negative transient voltage, dV/dt
immune
Gate drive supply range from 10 V to 20 V
Undervoltage lockout for both channels
3.3 V, 5 V, and 15 V input logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
Outputs in phase with inputs
Logic and power ground +/- 5 V offset.
Internal 540 ns deadtime
Lower di/dt gate driver for better
noise immunity
DS No.PD60266 Rev A
IRS2308
(S)PbF
www.irf.com 1
(Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
Description
The IRS2308/IRS23084 are high volt-
age, high speed power MOSFET and
IGBT drivers with dependent high and
low side referenced output channels.
Proprietary HVIC and latch immune
CMOS technologies enable ruggedized
monolithic construction. The logic input
is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high
pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used
to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V.
Packages
8-Lead SOIC
IRS2308S
8-Lead PDIP
IRS2308
Part
Input
logic
Cross-
conduction
prevention
logic
Deadtime
(ns)
Ground Pins
Ton/Toff
(ns)
2106
COM
21064
HIN/LIN no none
V
SS/COM
220/200
2108 Internal 540 COM
21084
HIN/
LIN
yes
Programmable 540 - 5000
VSS/COM
220/200
2109 Internal 540 COM
21094
IN/SD yes
Programmable 540 - 5000 VSS/COM
750/200
Feature Comparison
2304
HIN/LIN
yes
Internal 100
COM
160/140
2308
HIN/LIN yes
Internal 540 COM 220/200
IRS2308(S)PbF
www.irf.com 2
Symbol Definition Min. Max. Units
V
B
High side floating absolute voltage -0.3 625
V
S
High side floating supply offset voltage V
B
- 25 V
B
+ 0.3
V
HO
High side floating output voltage V
S
- 0.3 V
B
+ 0.3
V
CC
Low side and logic fixed supply voltage -0.3 25
V
LO
Low side output voltage -0.3 V
CC
+ 0.3
V
IN
Logic input voltage (HIN & LIN ) V
SS
- 0.3 V
CC
+ 0.3
dV
S
/dt Allowable offset supply voltage transient 50 V/ns
P
D
Package power dissipation @ T
A
+25 °C
(8 lead PDIP) 1.0
(8 lead SOIC) 0.625
Rth
JA
Thermal resistance, junction to ambient
(8 lead PDIP) 125
(8 lead SOIC) 200
T
J
Junction temperature 150
T
S
Storage temperature -50 150
T
L
Lead temperature (soldering, 10 seconds) 300
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Note 1: Logic operational for V
S
of -5 V to +600 V. Logic state held for V
S
of -5 V to -V
BS
. (Please refer to the Design Tip
DT97-3 for more details).
V
°C
°C/W
W
Recommended Operating Conditions
The input/output logic timing diagram is shown in Fig. 1. For proper operation the device should be used within the
recommended conditions. The V
S
and V
SS
offset rating are tested with all supplies biased at a 15 V differential.
V
B
High side floating supply absolute voltage V
S
+ 10 V
S
+ 20
V
S
High side floating supply offset voltage Note 1 600
V
HO
High side floating output voltage V
S
V
B
V
CC
Low side and logic fixed supply voltage 10 20
V
LO
Low side output voltage 0 V
CC
V
IN
Logic input voltage COM V
CC
T
A
Ambient temperature -40 125
V
Symbol Definition Min. Max. Units
°C
www.irf.com 3
IRS2308(S)PbF
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15 V, V
SS
= COM, DT= V
SS
and T
A
= 25 °C unless otherwise specified. The V
IL
, V
IH,
and I
IN
param-
eters are referenced to V
SS
/COM and are applicable to the respective input leads: HIN and LIN. The V
O
, I
O,
and R
on
parameters are referenced to COM and are applicable to the respective output leads: HO and LO.
Symbol Definition Min. Typ. Max. Units Test Conditions
V
IH
Logic “1” input voltage for HIN & LIN 2.5
V
IL
Logic “0” input voltage for HIN & LIN 0.8
V
OH
High level output voltage, V
BIAS
- V
O
0.05 0.2
V
OL
Low level output voltage, V
O
0.02 0.1
I
LK
Offset supply leakage current 50 V
B
= V
S
= 600 V
I
QBS
Quiescent V
BS
supply current 20 60 150
I
QCC
Quiescent V
CC
supply current 0.4 1.0 1.6 mA
I
IN+
Logic “1” input bias current 5 20 HIN = 5 V, LIN = 5 V
I
IN-
Logic “0” input bias current 1 2 HIN = 0 V, LIN = 0 V
V
CCUV+
V
CC
and V
BS
supply undervoltage positive going
8.0 8.9 9.8
V
BSUV+
threshold
V
CCUV-
V
CC
and V
BS
supply undervoltage negative going
7.4 8.2 9.0
V
BSUV-
threshold
V
CCUVH
Hysteresis 0.3 0.7
V
BSUVH
I
O+
Output high short circuit pulsed curren 200 290 —
V
O
= 0 V,
PW10 µs
I
O-
Output low short circuit pulsed current 420 600
V
O
= 15 V,
PW10 µs
V
µA
µA
V
mA
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15 V, V
SS
= COM, C
L
= 1000 pF, T
A
= 25 °C, DT = V
SS
unless otherwise specified.
Symbol Definition Min. Typ. Max. Units Test Conditions
t
on
Turn-on propagation delay 220 300 V
S
= 0 V
t
off
Turn-off propagation delay 200 280 V
S
= 0 V or 600 V
MT Delay matching
|
t
on
- t
off
|
—0 46
t
r
Turn-on rise time 100 220
t
f
Turn-off fall time 35 80
DT
Deadtime: LO turn-off to HO turn-on(DT
LO-HO) &
400 540 680
HO turn-off to LO turn-on (DT
HO-LO)
MDT Deadtime matching =
|
DT
LO-HO
- DT
HO-LO
|
—0 60
ns
V
S
= 0 V
V
CC
= 10 V to 20 V
I
O
= 2 mA
V
IN
= 0 V or 5 V

IRS2308SPBF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
Gate Drivers 3-Phase Bridge DRVR 600V 600mA 540ns
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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