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1N4007

P1-P3P4-P5
AU2PK, AU2PM
www.vishay.com
Vishay General Semiconductor
Revision: 19-Feb-15
1
Document Number: 89337
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Avalanche Surface Mount Rectifiers
TYPICAL APPLICATIONS
For use in lighting, fast switching rectification of power
supplies, inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Glass passivated pellet chip junction
• Fast reverse recovery time
• Controlled avalanche characteristics
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant and
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Notes
(1)
Mounted on 10 mm x 10 mm pad areas, 1 oz. FR4 PCB
(2)
Free air, mounted on recommended pad area
PRIMARY CHARACTERISTICS
I
F(AV)
2.0 A
V
RRM
800 V, 1000 V
I
FSM
30 A
t
rr
75 ns
E
AS
20 mJ
V
F
at I
F
= 2.0 A 1.42 V
T
J
max. 175 °C
Package TO-277A (SMPC)
Diode variations Single die
TO-277A (SMPC)
Anode 1
Anode 2
Cathode
K
K
2
1
eSMP
®
Series
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL AU2PK AU2PM UNIT
Device marking code AU2K AU2M
Maximum repetitive peak reverse voltage V
RRM
800 1000 V
Maximum DC forward current (fig. 1)
I
F
(1)
2.0
A
I
F
(2)
1.3
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
30 A
Non-repetitive avalanche energy at T
J
= 25 °C
I
AS
= 2.5 A max.
E
AS
20
mJ
I
AS
= 1.0 A typ. 30
Operating junction and storage temperature range T
J
, T
STG
-55 to +175 °C
AU2PK, AU2PM
www.vishay.com
Vishay General Semiconductor
Revision: 19-Feb-15
2
Document Number: 89337
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Notes
(1)
Free air, mounted on recommended PCB 1 oz. pad are; thermal resistance R
JA
- junction to ambient
(2)
Units mounted on PCB with 10 mm x 10 mm copper pad areas; R
JM
- junction to mount
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage I
F
= 2.0 A
T
A
= 25 °C
V
F
(1)
2.1 2.5
V
T
A
= 125 °C 1.42 2.0
Reverse current Rated V
R
T
A
= 25 °C
I
R
(2)
0.27 10
μA
T
A
= 125 °C 62 500
Maximum reverse recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
50 75 ns
Typical junction capacitance per diode Rated V
R
= 4.0 V, 1 MHz C
J
29 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL AU2PK AU2PM UNIT
Typical thermal resistance
R
JA
(1)
85
°C/W
R
JM
(2)
5
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
AU2PM-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel
AU2PM-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel
AU2PMHM3/86A
(1)
0.10 86A 1500 7" diameter plastic tape and reel
AU2PMHM3/86A
(1)
0.10 87A 6500 13" diameter plastic tape and reel
AU2PMHM3_A/H
(1)
0.10 H 1500 7" diameter plastic tape and reel
AU2PMHM3_A/I
(1)
0.10 I 6500 13" diameter plastic tape and reel
AU2PK, AU2PM
www.vishay.com
Vishay General Semiconductor
Revision: 19-Feb-15
3
Document Number: 89337
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Average Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
Ambient Temperature (°C)
DC Forward Current (A)
0
0.4
0.6
0.8
1.2
1.4
1.6
2.4
0 25 50 75 100 125 150 175
T
M
= 159 °C
T
A
= 25 °C
T
M
Measured
at the Cathode Band Terminal
1.0
0.2
1.8
2.0
2.2
Average Forward Current (A)
Average Power Loss (W)
0
1.0
1.5
4.0
0 0.2 0.4 0.6 1.0 1.2 1.4 2.4
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = t
p
/T t
p
T
3.5
3.0
2.5
2.0
0.8 1.6 1.8 2.0 2.2
0.5
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0.1
1
10
100
0.2 0.6 1.8 5.0
T
A
= 125 °C
T
A
= 75 °C
T
A
= 175 °C
T
A
= 25 °C
1.0 2.2 2.61.4 3.0 3.4 3.8 4.2 4.6
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (μA)
0.01
0.1
1
10
100
1000
10 20 30 40 50 60 70 80 90 100
T
A
= 125 °C
T
A
= 25 °C
T
A
= 75 °C
T
A
= 175 °C
Reverse Voltage (V)
Junction Capacitance (pF)
1
100
0.1 1 10 100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
10
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
1
10
100
0.01 0.1 1 10 100
Junction-to-Ambient
P1-P3P4-P5

1N4007

Mfr. #:
Buy 1N4007
Manufacturer:
Taiwan Semiconductor
Description:
Rectifiers Vr/1000V Io/1A T/R
Lifecycle:
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