RJK03M5DNS Preliminary
R07DS0769EJ0110 Rev.1.10 Page 4 of 6
May 29, 2012
20
16
12
8
4
25 50 75 100 125 150
0
50
40
30
20
10
0
0.4 0.8 1.2 1.6 2.0
010 3020
10000
3000
1000
300
100
30
10
Crss
Coss
Ciss
50
40
30
20
10
0
20
16
12
8
4
816243240
00
5 V
10 V
Capacitance C (pF)
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Dynamic Input Characteristics
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
I
D
= 25 A
V
GS
V
DS
V
DD
= 25 V
10 V
V
DD
= 25 V
10 V
Pulse Test
V
GS
= 0, –5 V
Channel Temperature Tch (°C)
Avalanche Energy EAS (mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
20
8
4
–25 0 25 50 75 100 125 150
0
10 V
12
16
Case Temperature Tc (°C)
Static Drain to Source On State Resistance
vs. Temperature
Pulse Test
I
D
= 5 A, 10 A, 20 A
5 A, 10 A, 20 A
V
GS
= 4.5 V
