HN4K03JU
2014-03-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
HN4K03JU
High Speed Switching Applications
Analog Switch Applications
z High input impedance
z Low gate threshold voltage: V
th
= 0.5 to 1.5V
z Excellent switching times
z Small package
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristics Symbol Rating Unit
Drain-Source voltage V
DS
20 V
Gate-Source voltage V
GSS
10 V
DC Drain current I
D
100 mA
Drain power dissipation P
D
* 200 mW
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating
JEDEC ―
JEITA ―
TOSHIBA
2-2L1B
Weight: 6.2 mg (typ.)
Unit: mm
Start of commercial production
1997-02
