Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
2SD1664T100P
P1-P3
(96-207-D12)
External dimensions (Units: mm)
249
T
ransistors
Medium
Power
T
ransistor
(32V
,
1A)
2SD1664
/
2SD1858
Features
1)
Low V
CE(sat)
, V
CE(sat)
= 0.15V (typical).
(I
C
/I
B
= 500mA
/
50mA)
2)
Complements the
2SB1
132 / 2SB1237.
Structure
Epitaxial planar type
NPN silicon transistor
Absolute maximum ratings (T
a = 25
C)
250
T
ransistors
2SD1664 / 2SD1858
Electrical characteristics (T
a = 25
C)
Packaging specifications and h
FE
h
FE
values are classified as follows :
Electrical characteristic curves
251
T
ransistors
2SD1664 / 2SD1858
P1-P3
2SD1664T100P
Mfr. #:
Buy 2SD1664T100P
Manufacturer:
Description:
Bipolar Transistors - BJT NPN 32V 1A
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
2SD1664T100Q
2SD1664T100R
2SD1664T100P