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2SD1664T100Q

P1-P3
(96-207-D12)
External dimensions (Units: mm)
249
Transistors
Medium Power Transistor (32V, 1A)
2SD1664 / 2SD1858
Features
1) Low V
CE(sat), VCE(sat) = 0.15V (typical).
(I
C /IB = 500mA/50mA)
2) Complements the
2SB1132 / 2SB1237.
Structure
Epitaxial planar type
NPN silicon transistor
Absolute maximum ratings (Ta = 25C)
250
Transistors 2SD1664 / 2SD1858
Electrical characteristics (Ta = 25C)
Packaging specifications and h
FE
hFE values are classified as follows :
Electrical characteristic curves
251
Transistors 2SD1664 / 2SD1858
P1-P3

2SD1664T100Q

Mfr. #:
Buy 2SD1664T100Q
Manufacturer:
Description:
Bipolar Transistors - BJT NPN 32V 1A
Lifecycle:
New from this manufacturer.
Delivery:
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