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BYV415J-600PQ

P1-P3P4-P6P7-P9P10-P10
BYV415J-600P
Dual ultrafast power diode
22 February 2018 Product data sheet
1. General description
Dual ultrafast power diodes in a TO3PF plastic package.
2. Features and benefits
• Very low on-state loss
• Reduces switching losses in associated MOSFET or IGBT
• Low leakage current
• Isolated plastic package
3. Applications
• Active PFC in air conditioner
• S.M.P.S Power Factor Correction (PFC)
• Half-bridge/full-bridge switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
R
reverse voltage DC - - 600 V
I
F(AV)
average forward
current
δ = 0.5 ; T
h
≤ 101 °C; square-wave
pulse; Fig. 1; Fig. 2; Fig. 3
- - 15 A
I
FRM
repetitive peak forward
current
δ = 0.5 ; t
p
= 25 µs; T
h
≤ 101 °C;
Square-ware pulse
- - 30 A
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse; per diode; Fig. 4
- - 150 AI
FSM
non-repetitive peak
forward current
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse; per diode
- - 165 A
Static characteristics
I
F
= 15 A; T
j
= 25 °C; Fig. 6 - 1.17 1.4 VV
F
forward voltage
I
F
= 15 A; T
j
= 150 °C; Fig. 6 - 1 - V
Dynamic characteristics
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C; Fig. 7
- 38 - ns
I
F
= 15 A; V
R
= 200 V; dI
F
/dt = 200 A/
µs; T
j
= 25 °C; Fig. 7
- 67 - ns
t
rr
reverse recovery time
I
F
= 15 A; V
R
= 200 V; dI
F
/dt = 200 A/
µs; T
j
= 125 °C; Fig. 7
- 106 - ns
WeEn Semiconductors
BYV415J-600P
Dual ultrafast power diode
BYV415J-600P All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet 22 February 2018 2 / 10
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 A1 anode 1
2 K cathode
3 A2 anode 2
mb mb mounting base
mb
TO3PF
sym125
A2A1
K
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BYV415J-600P TO3PF Plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-3P ‘full pack’
TO3PF
WeEn Semiconductors
BYV415J-600P
Dual ultrafast power diode
BYV415J-600P All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet 22 February 2018 3 / 10
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
repetitive peak reverse
voltage
- 600 V
V
RWM
crest working reverse
voltage
- 600 V
V
R
reverse voltage DC - 600 V
I
F(AV)
average forward current δ = 0.5 ; T
h
≤ 101 °C; square-wave pulse;
Fig. 1; Fig. 2; Fig. 3
- 15 A
I
O(AV)
average output current δ = 0.5 ; T
h
≤ 90 °C; square-wave pulse;
both diodes conducting
- 30 A
I
FRM
repetitive peak forward
current
δ = 0.5 ; t
p
= 25 µs; T
h
≤ 101 °C; Square-
ware pulse
- 30 A
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse; per diode; Fig. 4
- 150 AI
FSM
non-repetitive peak
forward current
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse; per diode
- 165 A
T
stg
storage temperature -65 175 °C
T
j
junction temperature - 175 °C
0 5 10 15 20 25
0
5
10
15
20
25
30
I
F(AV)
(A)
P
tot
0.1
δ = 1
0.5
0.2
I
F(AV)
= I
F(RMS)
× √δ
V
o
= 0.990 V; R
s
= 0.0141 Ω
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform; maximum
values; per diode
0 5 10 15
0
5
10
15
20
25
I
F(AV)
(A)
P
tot
a = form factor = I
F(RMS)
/ I
F(AV)
V
o
= 0.990 V; R
s
= 0.0141 Ω
Fig. 2. Forward power dissipation as a function
of average forward current; sinusoidal waveform;
maximum values; per diode
P1-P3P4-P6P7-P9P10-P10

BYV415J-600PQ

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Buy BYV415J-600PQ
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers BYV415J-600PQ/TO3PF/STANDARD M
Lifecycle:
New from this manufacturer.
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