IDT
™
/ ICS
™
LVCMOS/LVTTL CLOCK GENERATOR 3 ICS840001BG REV. A JUNE 13, 2007
ICS840001
FEMTOCLOCKS™ CRYSTAL-TO-LVCMOS/LVTTL CLOCK GENERATOR
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V
DD
4.6V
Inputs, V
I
-0.5V to V
DD
+ 0.5 V
Outputs, V
O
-0.5V to V
DDO
+ 0.5V
Package Thermal Impedance, θ
JA
101.7°C/W (0 mps)
Storage Temperature, T
STG
-65°C to 150°C
NOTE: Stresses beyond those listed under Absolute
Maximum Ratings may cause permanent damage to the
device. These ratings are stress specifications only. Functional op-
eration of product at these conditions or any conditions beyond
those listed in the DC Characteristics or AC Characteristics is not
implied. Exposure to absolute maximum rating conditions for ex-
tended periods may affect product reliability.
TABLE 4A. POWER SUPPLY DC CHARACTERISTICS, V
DD
= V
DDA
= 3.3V±5%, TA = -30°C TO 85°C
lobmySretemaraPsnoitidnoCtseTmuminiMlacipyTmumixaMstinU
V
DD
egatloVylppuSeroC 531.33.3564.3V
V
ADD
egatloVylppuSgolanA 531.33.3564.3V
I
DD
tnerruCylppuSrewoP 08Am
I
ADD
tnerruCylppuSgolanA 01Am
TABLE 5. CRYSTAL CHARACTERISTICS
TABLE 4B. LVCMOS/LVTTL DC CHARACTERISTICS, V
DD
= V
DDA
= 3.3V±5%, TA = -30°C TO 85°C
lobmySretemaraPsnoitidnoCtseTmuminiMlacipyTmumixaMstinU
V
HI
egatloVhgiHtupnI 2V
DD
3.0+V
V
LI
egatloVwoLtupnI 3.0-8.0V
I
HI
tnerruChgiHtupnI
LES_QERFV
DD
V=
NI
V564.3=051Aµ
EOV
DD
V=
NI
V564.3=5Aµ
I
LI
tnerruCwoLtupnI
LES_QERFV
DD
V,V564.3=
NI
V0=5-Aµ
EOV
DD
V,V564.3=
NI
V0=051-Aµ
V
HO
1ETON;egatloVhgiHtuptuO 6.2V
V
LO
1ETON;egatloVwoLtuptuO 5.0V
05htiwdetanimretstuptuO:1ETON Ω Vot
DD
,noitceSnoitamrofnItnemerusaeMretemaraPeeS.2/
."tiucriCtseTdaoLtuptuOV3.3"
retemaraPsnoitidnoCtseTmuminiMlacipyTmumixaMstinU
noitallicsOfoedoM latnemadnuF
ycneuqerF 5265.62zHM
)RSE(ecnats
iseRseireStnelaviuqE 05
Ω
ecnaticapaCtnuhS 7Fp
