OMO ElectronicOMO Electronic
Expand menu
0 Cart

TSC5802DCP ROG

P1-P3P4-P6
TSC5802D
Taiwan Semiconductor
Document Number: DS_P0000180 1 Version: B15
High Voltage Fast-Switching NPN Power Transistor
FEATURES
● High Voltage Capability
● Fast Switching Speed
● Pb-free plating
● RoHS compliant
● Halogen-free mold compound
APPLICATION
● Electronic Ballast
● Switch mode power supply
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
BV
CEO
450
V
BV
CBO
1050
V
I
C
2.5
A
V
CE(SAT)
I
C
=0.7A, I
B
=0.14A
0.5
V
TO-252
(DPAK)
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
V
CBO
1050
V
Collector-Emitter Voltage @ V
BE
=0V
V
CES
450
V
Emitter-Base Voltage
V
EBO
15
V
Collector Current
I
C
2.5
A
Collector Peak Current (tp <5ms)
I
CM
4
A
Base Current
I
B
1.5
A
Base Peak Current (tp <5ms)
I
BM
3
A
Power Total Dissipation @ T
A
=25ºC
P
DTOT
30
W
Maximum Operating Junction Temperature
T
J
+150
o
C
Storage Temperature Range
T
STG
-55 to +150
o
C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
R
ӨJC
4.17
o
C/W
Junction to Ambient Thermal Resistance
R
ӨJA
100
o
C/W
TSC5802D
Taiwan Semiconductor
Document Number: DS_P0000180 2 Version: B15
ELECTRICAL SPECIFICATIONS (T
A
= 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Collector-Base Voltage
I
C
=0.5mA
BV
CBO
1050
--
--
V
Collector-Emitter Breakdown Voltage
I
C
=5mA
BV
CEO
450
--
--
V
Emitter-Base Breakdown Voltage
I
E
=1mA
BV
EBO
15
--
--
V
Collector Cutoff Current
V
CE
=400V, I
B
=0
I
CEO
--
10
250
µA
Collector Cutoff Current
V
CB
=950V, I
E
=0
I
CBO
--
--
10
µA
Collector-Emitter Saturation Voltage
I
C
=0.7A, I
B
=0.14A
V
CE(SAT)
1
---
--
0.5
V
Collector-Emitter Saturation Voltage
I
C
=2A, I
B
=0.6A
V
CE(SAT)
2
---
1.5
3.0
V
Base-Emitter Saturation Voltage
I
C
=2A, I
B
=0.6A
V
BE(SAT)
1
--
1.0
1.6
V
DC Current Gain
V
CE
=5V, I
C
=0.1A
h
FE
1
50
70
100
V
CE
=3V, I
C
=0.5A
h
FE
2
18
23
50
Diode Forward Voltage
I
C
=1A
V
F
--
--
1.5
V
Rise Time
(Note 2)
V
CC
=5V, I
C
=0.5A
t
r
--
--
1
µs
Storage Time
(Note 2)
t
STG
2.5
3
3.5
µs
Fall Time
(Note 2)
t
f
--
--
1.2
µs
Repetitive Avalanche Energy
L=2mH
E
AR
5
--
--
mJ
Notes:
1. Pulse test: ≤380µs, duty cycle ≤ 2%
2. For DESIGN AID ONLY, not subject to production testing.
TSC5802D
Taiwan Semiconductor
Document Number: DS_P0000180 3 Version: B15
ORDERING INFORMATION
PART NO.
PACKAGE
PACKING
TSC5802DCH C5G
TO-251
75pcs / Tube
TSC5802DCP ROG
TO-252
2,500pcs / 13” Reel
Note:
1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
2. Halogen-free according to IEC 61249-2-21 definition
P1-P3P4-P6

TSC5802DCP ROG

Mfr. #:
Buy TSC5802DCP ROG
Manufacturer:
Taiwan Semiconductor
Description:
Bipolar Transistors - BJT High voltage fast Switching NPN Transistor with diode
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet