MJF6388 (NPN), MJF6668 (PNP)
http://onsemi.com
4
t, TIME (ms)
0.01
0.01 0.05 1 2 5 10 20 50 500 100K0.1 0.50.2
1
0.2
0.1
0.05
r(t), TRANSIENT THERMAL
R
q
JC
(t) = r(t) R
q
JC
R
q
JC
= °C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
q
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
SINGLE PULSE
RESISTANCE (NORMALIZED)
Figure 5. Thermal Response
0.5
D = 0.5
0.3
0.03
0.02
0.02
100 2003300.3 300 1K 2K 5K 10K 20K 50K3K 30K
0.2
0.1
0.05
T
C
, CASE TEMPERATURE (°C)
0
40 120 160
0.6
POWER DERATING FACTOR
SECOND BREAKDOWN
DERATING
1
0.8
0.4
0.2
60 100 14080
THERMAL
DERATING
20
Figure 6. Maximum Power Derating
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 4 is based on T
J(pk)
= l50_C; T
C
is
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
< 150_C. T
J(pk)
may be calculated from the data in Figure 5.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
Figure 7. Typical Small−Signal Current Gain
f, FREQUENCY (kHz)
h
fe
, SMALL-SIGNAL CURRENT GAIN
T
C
= 25°C
V
CE
= 4 Vdc
I
C
= 3 Adc
10,000
200
100
1000
500
300
10
30
2000
3000
5000
1 100050105 100 5002 20 200
20
50
f, FREQUENCY (kHz)
h
FE
, SMALL-SIGNAL CURRENT GAIN
10,000
200
100
1000
500
10
2000
5000
1 100050105 100 5002 20 200
20
50
MJF6388
MJF6668
T
C
= 25°C
V
CE
= 4 VOLTS
I
C
= 3 AMPS
3 30 300707
