Vishay Siliconix
Si7892BDP
Document Number: 73228
S-80440-Rev. C, 03-Mar-08
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
FEATURES
• Halogen-free available
• TrenchFET
®
Power MOSFET
• New Low Thermal Resistance PowerPAK
®
Package with Low 1.07 mm Profile
• Low Gate Charge
• 100 % R
g
Tested
APPLICATIONS
• Synchronous Rectifier
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A) Q
g
(Typ.)
30
0.0042 at V
GS
= 10 V 25
27
0.0057 at V
GS
= 4.5 V 22
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerP AK
-8
Bottom View
Ordering Information:
Si7892BDP-T1-E3 (Lead (Pb)-free)
Si7892BDP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFE
G
D
S
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150°C)
a
T
A
= 25 °C
I
D
25 15
A
T
A
= 70 °C
20 12
Pulsed Drain Current (10 µs Pulse Width)
I
DM
60
Continuous Source Current (Diode Conduction)
a
I
S
4.1 1.5
Avalanche Current
L = 0.1 mH
I
AS
40
Single Pulse Avalanche Energy
E
AS
80 mJ
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
51.8
W
T
A
= 70 °C
3.2 1.1
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
b, c
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
R
thJA
20 25
°C/WSteady State
53 70
Maximum Junction-to-Case (Drain) Steady State
R
thJC
2.1 3.2
RoHS
OMPLIAN