OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MCC501-16IO2

P1-P3P4-P6P7-P9P10-P10
Rating Report. Types M##501-12io2 and M##501-18io2 Issue 3 Page 1 of 10 September, 2014
IXYS
Date: 29.09.2014
Data Sheet Issue: 3
Thyristor/Diode Modules M## 501
Absolute Maximum Ratings
V
RRM
V
DRM
[V]
MCC
MCD
1200
501-12io2
501-12io2
1400
501-14io2
501-14io2
1600
501-16io2
501-16io2
1800
501-18io2
501-18io2
VOLTAGE RATINGS
MAXIMUM
LIMITS
UNITS
V
DRM
Repetitive peak off-state voltage
1)
1200-1800
V
V
DSM
Non-repetitive peak off-state voltage
1)
1300-1900
V
V
RRM
Repetitive peak reverse voltage
1)
1200-1800
V
V
RSM
Non-repetitive peak reverse voltage
1)
1300-1900
V
OTHER RATINGS
MAXIMUM
LIMITS
UNITS
I
T(AV)M
Maximum average on-state current, T
C
= 85°C
2)
503
A
I
T(AV)M
Maximum average on-state current. T
C
= 100°C
2)
347
A
I
T(RMS)M
Nominal RMS on-state current, T
C
= 55°C
2)
1195
A
I
T(d.c.)
D.C. on-state current, T
C
= 55°C
985
A
I
TSM
Peak non-repetitive surge t
p
= 10 ms, V
RM
= 60%V
RRM
3)
14.5
kA
I
TSM2
Peak non-repetitive surge t
p
= 10 ms, V
RM
10V
3)
16.0
kA
I
2
t
I
2
t capacity for fusing t
p
= 10 ms, V
RM
= 60%V
RRM
3)
1.05×10
6
A
2
s
I
2
t
I
2
t capacity for fusing t
p
= 10 ms, V
RM
10 V
3)
1.28×10
6
A
2
s
(di/dt)
cr
Critical rate of rise of on-state current (repetitive)
4)
200
A/µs
Critical rate of rise of on-state current (non-repetitive)
4)
400
A/µs
V
RGM
Peak reverse gate voltage
5
V
P
G(AV)
Mean forward gate power
4
W
P
GM
Peak forward gate power
30
W
V
ISOL
Isolation Voltage
5)
3000
V
T
vj op
Operating temperature range
-40 to +125
°C
T
stg
Storage temperature range
-40 to +125
°C
Notes:
1) De-rating factor of 0.13% per °C is applicable for T
vj
below 25°C.
2) Single phase; 50 Hz, 180° half-sinewave.
3) Half-sinewave, 125°C T
vj
initial.
4) V
D
= 67% V
DRM
, I
FG
= 2 A, t
r
0.5µs, T
C
= 125°C.
5) AC RMS voltage, 50 Hz, 1min test
IXYS Thyristor/Diode Module Types M##501-12io2 to M##501-18io2
Rating Report. Types M##501-12io2 and M##501-18io2 Issue 3 Page 2 of 10 September, 2014
Characteristics
PARAMETER
MIN.
TYP.
MAX.
TEST CONDITIONS
1)
UNITS
V
TM
Maximum peak on-state voltage
-
-
1.50
I
TM
= 1700 A
V
V
TM
Maximum peak on-state voltage
-
-
1.43
I
TM
= 1500 A
V
V
T0
Threshold voltage
-
-
0.85
V
r
T
Slope resistance
-
-
0.30
m
(dv/dt)
cr
Critical rate of rise of off-state voltage
1000
-
-
V
D
= 80% V
DRM
, linear ramp, Gate o/c
V/s
I
DRM
Peak off-state current
-
-
70
Rated V
DRM
mA
I
RRM
Peak reverse current
-
-
70
Rated V
RRM
mA
V
GT
Gate trigger voltage
-
-
2.5
T
vj
= 25°C, V
D
= 12 V, I
T
= 3 A
V
I
GT
Gate trigger current
-
-
250
mA
V
GD
Gate non-trigger voltage
0.25
-
-
67% V
DRM
V
I
L
Latching current
-
-
1000
V
D
= 12 V, T
vj
= 25°C
mA
I
H
Holding current
-
-
300
V
D
= 12 V, T
vj
= 25°C
mA
t
gd
Gate controlled turn-on delay time
-
-
2.0
I
FG
= 2 A, t
r
= 1 µs, V
D
= 40%V
DRM
,
I
TM
= 1500 A, di/dt = 10 A/µs, T
vj
= 25°C
µs
t
gt
Turn-on time
-
-
8.0
Q
rr
Recovered Charge
-
1350
1550
I
TM
= 1000 A, t
p
= 1 ms, di/dt = 10A/µs,
V
R
= 100 V
µC
Q
ra
Recovered Charge, 50% chord
-
1150
-
µC
I
rm
Reverse recovery current
-
120
-
A
t
rr
Reverse recovery time, 50% chord
-
19
-
µs
t
q
Turn-off time
-
-
200
I
TM
= 1500 A, t
p
= 1 ms, di/dt = 10 A/µs,
V
R
= 100 V, V
DR
= 67%V
DRM
, dv
DR
/dt = 50 V/µs
µs
R
thJC
Thermal resistance, junction to case
-
-
0.062
Single Thyristor
K/W
-
-
0.031
Whole Module
K/W
R
thCH
Thermal resistance, case to heatsink
-
-
0.02
Single Thyristor
K/W
-
-
0.01
Whole Module
K/W
F
1
Mounting force (to heatsink)
4.25
-
5.75
Nm
F
2
Mounting force (to terminals)
10.2
-
13.8
2)
Nm
W
t
Weight
-
1.5
-
kg
Notes:
1) Unless otherwise indicated T
vj
=125°C.
2) Screws must be lubricated.
IXYS Thyristor/Diode Module Types M##501-12io2 to M##501-18io2
Rating Report. Types M##501-12io2 and M##501-18io2 Issue 3 Page 3 of 10 September, 2014
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
V
DRM
V
RRM
V
V
DSM
V
RSM
V
V
D
V
R
DC V
12
1200
1300
900
14
1400
1500
1050
16
1600
1700
1200
18
1800
1900
1350
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
vj
below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 400A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 200A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
I
GM
I
G
t
p1
4A/µs
The magnitude of I
GM
should be between five and ten times I
GT
, which is shown on page 2. Its duration
(t
p1
) should be 20µs or sufficient to allow the anode current to reach ten times I
L
, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
G
should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times I
GT
.
P1-P3P4-P6P7-P9P10-P10

MCC501-16IO2

Mfr. #:
Buy MCC501-16IO2
Manufacturer:
Littelfuse
Description:
SCR Modules Dual Thyristor Modules
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet