MCC501-14IO2

IXYS Thyristor/Diode Module Types M##501-12io2 to M##501-18io2
Rating Report. Types M##501-12io2 and M##501-18io2 Issue 3 Page 4 of 10 September, 2014
8.0 Computer Modelling Parameters
8.1 Thyristor Dissipation Calculations
T
AVTTT
AV
rff
WrffVV
I
2
2
2
00
2
4
and:
Kj
th
AV
TTT
R
T
W
max
Where V
T0
= 0.85 V, r
T
= 0.30 m.
R
th
= Supplementary thermal impedance, see table below and
ff = Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle
30°
60°
90°
120°
180°
270°
d.c.
Square wave
0.0702
0.0685
0.0679
0.0668
0.0658
0.0637
0.0620
Sine wave
0.0677
0.0673
0.0664
0.0655
0.0650
Form Factors
Conduction Angle
30°
60°
90°
120°
180°
270°
d.c.
Square wave
3.464
2.449
2
1.732
1.414
1.149
1
Sine wave
3.98
2.778
2.22
1.879
1.57
8.2 Calculating thyristor V
T
using ABCD Coefficients
The on-state characteristic I
T
vs. V
T
, on page 6 is represented by a set of constants A, B, C, D, forming
the coefficients of the representative equation for V
T
in terms of I
T
given below:
TTTT
IDICIBAV ln
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The
resulting values for V
T
agree with the true device characteristic over a current range, which is limited to
that plotted.
25°C Coefficients
125°C Coefficients
A
1.27624207
A
1.1481301
B
5.582967×10
-4
B
-0.07739233
C
2.407706×10
-4
C
1.873999×10
-4
D
-4.020685×10
-3
D
0.01475625
IXYS Thyristor/Diode Module Types M##501-12io2 to M##501-18io2
Rating Report. Types M##501-12io2 and M##501-18io2 Issue 3 Page 5 of 10 September, 2014
8.3 D.C. Thermal Impedance Calculation
np
p
t
pt
p
err
1
1
Where p = 1 to n and:
n
=
number of terms in the series
t
=
Duration of heating pulse in seconds
r
t
=
Thermal resistance at time t
r
p
=
Amplitude of p
th
term
p
=
Time Constant of r
th
term
The coefficients for this device are shown in the table below:
D.C.
Term
1
2
3
4
5
r
p
1.37×10
-3
4.86×10
-3
0.0114
0.0223
0.0221
p
7.6×10
-4
8.6×10
-3
0.101
0.56
3.12
9.0 Reverse recovery ratings
(i) Q
ra
is based on 50% I
RM
chord as shown in Fig. 1
Fig. 1
(ii) Q
rr
is based on a 150 µs integration time i.e.
s
rrrr
dtiQ
150
0
.
(iii)
2
1
t
t
FactorK
IXYS Thyristor/Diode Module Types M##501-12io2 to M##501-18io2
Rating Report. Types M##501-12io2 and M##501-18io2 Issue 3 Page 6 of 10 September, 2014
Curves
Figure 1 On-state characteristics of Limit device
100
1000
10000
0 0.5 1 1.5 2 2.5 3
Instantaneous On-state voltage - V
TM
(V)
Instantaneous On-state current - I
TM
(A)
T
j
= 125°C
T
j
= 25°C
Figure 2 Gate characteristics Trigger limits
Figure 3 Gate characteristics Power curves
0
1
2
3
4
5
6
7
0 0.2 0.4 0.6 0.8 1
Gate Trigger Current - I
GT
(A)
Gate Trigger Voltage - V
GT
(V)
I
GD
, V
GD
I
GT
, V
GT
Min V
G
dc
Max V
G
dc
T
j
=25°C
125°C
25°C
-40°C
0
5
10
15
20
25
0 2 4 6 8 10
Gate Trigger Current - I
GT
(A)
Gate Trigger Voltage - V
GT
(V)
P
G
4W dc
P
G
Max 30W dc
Min V
G
dc
Max V
G
dc
T
j
=25°C
M##501-12io2-18io2
Issue 3
M##501-12io2-18io2
Issue 3
M##501-12io2-18io2
Issue 3

MCC501-14IO2

Mfr. #:
Manufacturer:
Description:
MOD THYRISTOR DUAL 14KV
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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