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PLZ36A-G3/H

P1-P3P4-P6P7-P9
PLZ Series
www.vishay.com
Vishay Semiconductors
Rev. 1.2. 29-Nov-16
1
Document Number: 84830
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Zener Diodes Permitting 500 mW Power Dissipation
FEATURES
• Sillicon planar Zener diodes, ultra small
• Low profile DO-219AC (MicroSMF) package
• Low leakage current
• Excellent stability
• High temperature soldering: 260 °C / 10 s at
terminals
• Wave and reflow solderable (reflow as per
JPC / JEDEC
®
J-STD 020) (double wave as
per IEC 61760-1)
• AEC-Q101 qualified available
• Base P/N-G3 - RoHS-compliant, green, industrial grade
•
Base P/N-HG3 - RoHS-compliant, green, AEC-Q101 qualified
• ESD immunity acc. IEC 61000-4-2 acc. to part table
• Surge performance acc. to part table
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
PARAMETER VALUE UNIT
V
Z
range nom. 2.0 to 39 V
Test current I
ZT
5 to 20 mA
V
Z
specification Pulse current
Int. construction Single
20278
1
2
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
PLZ-Series Part number-G3/H
4500 per 7" reel (8 mm tape) 22 500 / box
PLZ-Series Part number-HG3/H
PACKAGE
PACKAGE NAME WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS
DO-219AC (MicroSMF) 4.8 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C / 10 s at terminals
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Power dissipation
Mounted on FR4 board 50 mm x 50 mm x 1.6 mm,
solder land 10 mm x 10 mm, T
amb
= 85 °C
P
tot
500
mWPower dissipation
Mounted on FR4 board 50 mm x 50 mm x 1.6 mm,
solder land 10 mm x 10 mm, T
amb
= 25 °C
P
tot
960
Power dissipation
Mounted on FR4 board with recommended soldering
footpads (reflow)
P
tot
340
Non-repetitive peak surge power dissipation
t
p
= 8/20 μs acc. IEC 61000-4-5 (PLZ5V1A to PLZ39D) P
ZSM
100 W
t
p
= 8/20 μs acc. IEC 61000-4-5 (PLZ2V0A to PLZ4V7C) P
ZSM
70 W
Z-current I
Z
P
tot
/V
Z
mA
Junction temperature T
j
150
°C
Storage temperature range T
stg
-55 to +150
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Typ. thermal resistance junction to ambient air
Mounted on FR4 board 50 mm x 50 mm x 1.6 mm,
solder land 10 mm x 10 mm
R
thJA
130 K/W
Typ. thermal resistance junction to lead R
thJL
40 K/W
ELECTRICAL SPECIFICATIONS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward Voltage I
F
= 10 mA V
F
0.8 0.9 V
PLZ Series
www.vishay.com
Vishay Semiconductors
Rev. 1.2. 29-Nov-16
2
Document Number: 84830
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: t
p
40 ms
(2)
Pulse test: t
p
= 8/20 μs acc. IEC 61000-4-5
(3)
Contact and air discharge acc. IEC 61000-4-2
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PART
NUMBER
MARKING
CODE
ZENER
VOLTAGE
RANGE
(1)
TEST
CURRENT
REVERSE
CURRENT
DYNAMIC
RESISTANCE
PEAK PULSE
CURRENT
(2)
REVERSE
CLAMPING
VOLTAGE AT
I
PPM
ESD
IMMUNITY
(3)
V
Z
at I
ZT
I
ZT1
I
R
at V
R
Z
Z
at I
ZT
I
PPM
V
C
V
ESD
V mA μA V A V kV
MIN. MAX. MAX. MAX. MAX. MAX.
PLZ2V0A 2A0 1.88 2.10 20
120 0.5 140
12.4 5.65 20
PLZ2V0B 2B0 2.02 2.20 20 12.2 5.71 20
PLZ2V2A 2A2 2.12 2.30 20
120 0.7 120
12.1 5.76 20
PLZ2V2B 2B2 2.22 2.41 20 12.1 5.77 20
PLZ2V4A 2A4 2.33 2.52 20
120 1.0 100
12.1 5.78 30
PLZ2V4B 2B4 2.43 2.63 20 12.1 5.79 30
PLZ2V7A 2A7 2.54 2.75 20
100 1.0 100
11.8 5.91 30
PLZ2V7B 2B7 2.69 2.91 20 11.7 5.98 30
PLZ3V0A 3A0 2.85 3.07 20
20 1.0 80
11.6 6.02 30
PLZ3V0B 3B0 3.01 3.22 20 11.3 6.18 30
PLZ3V3A 3A3 3.16 3.38 20
10 1.0 70
11.2 6.22 30
PLZ3V3B 3B3 3.32 3.53 20 11.1 6.29 30
PLZ3V6A 3A6 3.455 3.695 20
51.0 60
10.9 6.40 30
PLZ3V6B 3B6 3.60 3.845 20 10.8 6.47 30
PLZ3V9A 3A9 3.74 4.10 20
51.0 50
10.7 6.54 30
PLZ3V9B 3B9 3.89 4.16 20 10.6 6.60 30
PLZ4V3A 4A3 4.04 4.29 20
51.0 40
10.5 6.66 30
PLZ4V3B 4B3 4.17 4.43 20 10.4 6.73 30
PLZ4V3C 4C3 4.30 4.57 20 10.3 6.80 30
PLZ4V7A 4A7 4.44 4.68 20
51.0 25
10.1 6.93 30
PLZ4V7B 4B7 4.55 4.80 20 9.9 7.06 30
PLZ4V7C 4C7 4.68 4.93 20 9.4 7.40 30
PLZ5V1A 5A1 4.81 5.07 20
51.5 20
12.3 8.14 30
PLZ5V1B 5B1 4.94 5.20 20 12.1 8.23 30
PLZ5V1C 5C1 5.09 5.37 20 11.9 8.40 30
PLZ5V6A 5A6 5.28 5.55 20
52.5 13
11.6 8.61 30
PLZ5V6B 5B6 5.45 5.73 20 11.3 8.82 30
PLZ5V6C 5C6 5.61 5.91 20 11.1 8.99 30
PLZ6V2A 6A2 5.78 6.09 20
53.0 10
10.7 9.32 30
PLZ6V2B 6B2 5.96 6.27 20 10.5 9.45 30
PLZ6V2C 6C2 6.12 6.44 20 10.3 9.66 30
PLZ6V8A 6A8 6.29 6.63 20
23.5 8
9.7 10.29 30
PLZ6V8B 6B8 6.49 6.83 20 9.5 10.50 30
PLZ6V8C 6C8 6.66 7.01 20 9.4 10.60 30
PLZ7V5A 7A5 6.85 7.22 20
0.5 4.0 8
9.0 11.06 30
PLZ7V5B 7B5 7.07 7.45 20 8.8 11.34 30
PLZ7V5C 7C5 7.29 7.67 20 8.6 11.54 30
PLZ8V2A 8A2 7.53 7.92 20
0.5 5.0 8
8.4 11.80 30
PLZ8V2B 8B2 7.78 8.19 20 8.3 12.00 30
PLZ8V2C 8C2 8.03 8.45 20 7.9 12.60 30
PLZ9V1A 9A1 8.29 8.73 20
0.5 6.0 8
7.8 12.86 30
PLZ9V1B 9B1 8.57 9.01 20 7.6 13.17 30
PLZ9V1C 9C1 8.83 9.30 20 7.4 13.55 30
PLZ Series
www.vishay.com
Vishay Semiconductors
Rev. 1.2. 29-Nov-16
3
Document Number: 84830
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PART
NUMBER
MARKING
CODE
ZENER
VOLTAGE
RANGE
(1)
TEST
CURRENT
REVERSE
CURRENT
DYNAMIC
RESISTANCE
PEAK PULSE
CURRENT
(2)
REVERSE
CLAMPING
VOLTAGE AT
I
PPM
ESD
IMMUNITY
(3)
V
Z
at I
ZT
I
ZT1
I
R
at V
R
Z
Z
at I
ZT
I
PPM
V
C
V
ESD
V mA μA V A V kV
MIN. MAX. MAX. MAX. MAX. MAX.
PLZ10A 10A 9.12 9.59 20
0.2 7.0 8
7.09 14.1 30
PLZ10B 10B 9.41 9.90 20 6.90 14.5 30
PLZ10C 10C 9.70 10.20 20 6.75 14.8 30
PLZ10D 10D 9.94 10.44 20 6.58 15.2 30
PLZ11A 11A 10.18 10.71 10
0.2 8.0 10
6.47 15.5 30
PLZ11B 11B 10.50 11.05 10 6.25 16.0 30
PLZ11C 11C 10.82 11.38 10 6.10 16.4 30
PLZ12A 12A 11.13 11.71 10
0.2 9.0 12
5.95 16.8 30
PLZ12B 12B 11.44 12.03 10 5.80 17.2 30
PLZ12C 12C 11.74 12.35 10 5.43 18.4 30
PLZ13A 13A 12.11 12.75 10
0.2 10 14
5.29 18.9 30
PLZ13B 13B 12.55 13.21 10 5.15 19.4 30
PLZ13C 13C 12.99 13.66 10 5.05 19.8 30
PLZ15A 15A 13.44 14.13 10
0.2 11 16
4.93 20.3 30
PLZ15B 15B 13.89 14.62 10 4.76 21.0 30
PLZ15C 15C 14.35 15.09 10 4.50 22.0 30
PLZ16A 16A 14.80 15.57 10
0.2 12 18
4.25 23.5 30
PLZ16B 16B 15.25 16.04 10 4.18 23.9 30
PLZ16C 16C 15.69 16.51 10 3.96 25.2 30
PLZ18A 18A 16.22 17.06 10
0.2 13 23
3.95 25.3 30
PLZ18B 18B 16.82 17.70 10 3.77 26.5 30
PLZ18C 18C 17.42 18.33 10 3.69 27.1 30
PLZ20A 20A 18.02 18.96 10
0.2 15 28
3.43 29.1 30
PLZ20B 20B 18.63 19.59 10 3.40 29.4 30
PLZ20C 20C 19.23 20.22 10 3.33 30.0 30
PLZ20D 20D 19.72 20.72 10 3.18 31.4 30
PLZ22A 22A 20.15 21.20 5
0.2 17 30
3.13 31.9 30
PLZ22B 22B 20.64 21.71 5 3.07 32.6
30
PLZ22C 22C 21.08 22.17 5 2.82 35.4 25
PLZ22D 22D 21.52 22.63 5 2.80 35.6 25
PLZ24A 24A 22.05 23.18 5
0.2 19 35
2.77 36.1 25
PLZ24B 24B 22.61 23.77 5 2.70 37.0 25
PLZ24C 24C 23.12 24.31 5 2.64 37.8 25
PLZ24D 24D 23.63 24.85 5 2.61 38.3 25
PLZ27A 27A 24.26 25.52 5
0.2 21 45
2.55 39.2 25
PLZ27B 27B 24.97 26.26 5 2.49 40.1 25
PLZ27C 27C 25.63 26.95 5 2.32 43.0 20
PLZ27D 27D 26.29 27.64 5 2.30 43.5 20
Notes
(1)
Pulse test: t
p
40 ms
(2)
Pulse test: t
p
= 8/20 μs acc. IEC 61000-4-5
(3)
Contact and air discharge acc. IEC 61000-4-2
P1-P3P4-P6P7-P9

PLZ36A-G3/H

Mfr. #:
Buy PLZ36A-G3/H
Manufacturer:
Vishay Semiconductors
Description:
Zener Diodes Vz @Izt 32.14-33.79V Ippm 53.1V Max
Lifecycle:
New from this manufacturer.
Delivery:
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