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MJL21194

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 7
1 Publication Order Number:
MJL21193/D
MJL21193(PNP),
MJL21194(NPN)
Silicon Power Transistors
The MJL21193 and MJL21194 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
• Total Harmonic Distortion Characterized
• High DC Current Gain
• Excellent Gain Linearity
• High SOA
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
250 Vdc
Collector−Base Voltage V
CBO
400 Vdc
Emitter−Base Voltage V
EBO
5 Vdc
Collector−Emitter Voltage − 1.5 V V
CEX
400 Vdc
Collector Current − Continuous I
C
16 Adc
Collector Current − Peak (Note 1) I
CM
30 Adc
Base Current − Continuous I
B
5 Adc
Total Power Dissipation @ T
C
= 25_C
Derate above 25_C
P
D
200
1.43
W
W/_C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−65 to
+ 150
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
0.7
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
x = 3 or 4
A = Assembly Location
YY = Year
WW = Work Week
G = Pb−Free Package
Device Package Shipping
†
ORDERING INFORMATION
MJL21193G TO−264
(Pb−Free)
25 Units / Rail
MJL21194G TO−264
(Pb−Free)
25 Units / Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
16 AMPERE COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS, 200 WATTS
MJL2119x
AYYWWG
TO−264
CASE 340G
STYLE 2
MARKING DIAGRAM
1
BASE
2 COLLECTOR
3
EMITTER
1
2
3
1
BASE
EMITTER 3
COLLECTOR 2, 4
1
BASE
EMITTER 3
COLLECTOR 2, 4
PNP
NPN
MJL21193 (PNP), MJL21194 (NPN)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 100 mAdc, I
B
= 0)
V
CEO(sus)
250 − − Vdc
Collector Cutoff Current
(V
CE
= 200 Vdc, I
B
= 0)
I
CEO
− − 100
mAdc
Emitter Cutoff Current
(V
CE
= 5 Vdc, I
C
= 0)
I
EBO
− − 100
mAdc
Collector Cutoff Current
(V
CE
= 250 Vdc, V
BE(off)
= 1.5 Vdc)
I
CEX
− − 100
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V
CE
= 50 Vdc, t = 1 s (non−repetitive)
(V
CE
= 80 Vdc, t = 1 s (non−repetitive)
I
S/b
4.0
2.25
−
−
−
−
Adc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 8 Adc, V
CE
= 5 Vdc)
(I
C
= 16 Adc, I
B
= 5 Adc)
h
FE
25
8
−
−
75
−
Base−Emitter On Voltage
(I
C
= 8 Adc, V
CE
= 5 Vdc)
V
BE(on)
− − 2.2 Vdc
Collector−Emitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.8 Adc)
(I
C
= 16 Adc, I
B
= 3.2 Adc)
V
CE(sat)
−
−
−
−
1.4
4
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
V
RMS
= 28.3 V, f = 1 kHz, P
LOAD
= 100 W
RMS
h
FE
unmatched
(Matched pair h
FE
= 50 @ 5 A/5 V) h
FE
matched
T
HD
−
−
0.8
0.08
−
−
%
Current Gain Bandwidth Product
(I
C
= 1 Adc, V
CE
= 10 Vdc, f
test
= 1 MHz)
f
T
4 − − MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
C
ob
− − 500 pF
I
C
COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain Bandwidth Product
Figure 2. Typical Current Gain Bandwidth Product
f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
T
PNP MJL21193
f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
T
NPN MJL21194
I
C
COLLECTOR CURRENT (AMPS)
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
1.0 100.1
8.0
7.0
6.0
5.0
4.0
3.0
2.0
0
1.0 100.1
1.0
V
CE
= 10 V
5 V
T
J
= 25°C
f
test
= 1 MHz
10 V
V
CE
= 5 V
T
J
= 25°C
f
test
= 1 MHz
MJL21193 (PNP), MJL21194 (NPN)
http://onsemi.com
3
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (A)
NPN MJL21194
35
0
30
25
20
15
5.0
0
5.0 10 15 20 25
10
T
J
= 25°C
I
B
= 2 A
1.5 A
1 A
0.5 A
Figure 3. DC Current Gain, V
CE
= 20 V Figure 4. DC Current Gain, V
CE
= 20 V
Figure 5. DC Current Gain, V
CE
= 5 V Figure 6. DC Current Gain, V
CE
= 5 V
h
FE
, DC CURRENT GAIN
I
C
COLLECTOR CURRENT (AMPS)
I
C
COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
h
FE
, DC CURRENT GAIN
I
C
COLLECTOR CURRENT (AMPS)
I
C
COLLECTOR CURRENT (AMPS)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Typical Output Characteristics
I
C
, COLLECTOR CURRENT (A)
Figure 8. Typical Output Characteristics
PNP MJL21193 NPN MJL21194
h
FE
, DC CURRENT GAIN
TYPICAL CHARACTERISTICS
PNP MJL21193
PNP MJL21193
NPN MJL21194
1000
100
10
100101.00.1
1000
100
10
100101.00.1
1000
100
10
100101.00.1
1000
100
10
100101.00.1
30
0
25
20
15
10
5.0
0
5.0 10 15 20 25
V
CE
= 20 V
T
J
= 100°C
25°C
-25°C
V
CE
= 20 V
T
J
= 100°C
25°C
-25°C
T
J
= 100°C
25°C
-25°C
V
CE
= 5 V
T
J
= 100°C
25°C
-25°C
V
CE
= 20 V
T
J
= 25°C
1.5 A
I
B
= 2 A
1 A
0.5 A
P1-P3P4-P6

MJL21194

Mfr. #:
Buy MJL21194
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 16A 250V 200W NPN
Lifecycle:
New from this manufacturer.
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