VO2223B
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 12-Dec-17
3
Document Number: 83312
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements
Fig. 3 - dV/dt Test Circuit
Note
• This phototriac coupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with safety ratings shall be
ensured by means of protective circuits
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Trigger input current V
T
= 6 V I
FT
2.5 - 10 mA
Input reverse current V
R
= 5 V I
R
- - 10 μA
Forward voltage I
F
= 10 mA V
F
0.9 - 1.4 V
OUTPUT
Peak on-state voltage I
TM
= 1 A V
TM
--1.7V
Peak off-state current V
DRM
= 600 V I
DRM
- - 100 μA
Holding current R
L
= 100 Ω I
H
--25mA
Critical rate of rise of off-state voltage V
IN
= 400 V
RMS
(Fig. 3) dV/dt
cr
- 600 - V/μs
Critical rate of rise of commutating voltage V
IN
= 240 V
RMS
, I
T
= 1 A
RMS
(Fig. 3) dV/dt
crq
-0.7-V/μs
SAFETY AND INSULATION RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Climatic classification According to IEC 68 part 1 40 / 85 / 21
Pollution degree According to DIN VDE 0109 2
Comparative tracking index Insulation group IIIa CTI 175
Maximum rated withstanding isolation voltage According to UL1577, t = 1 min V
ISO
4470 V
RMS
Tested withstanding isolation voltage According to UL1577, t = 1 s V
ISO
5300 V
RMS
Maximum transient isolation voltage According to DIN EN 60747-5-5 V
IOTM
8000 V
peak
Maximum repetitive peak isolation voltage According to DIN EN 60747-5-5 V
IORM
890 V
peak
Isolation resistance
T
amb
= 25 °C, V
IO
= 500 V R
IO
≥ 10
12
Ω
T
amb
= 100 °C, V
IO
= 500 V R
IO
≥ 10
11
Ω
Output safety power P
SO
2000 mW
Input safety current I
SI
150 mA
Input safety temperature T
SI
165 °C
Creepage distance
DIP-8
≥ 7mm
Clearance distance ≥ 7mm
Creepage distance
SMD-8, option 7
≥ 8mm
Clearance distance ≥ 8mm
Insulation thickness DTI ≥ 0.4 mm
+
-
V
CC
R
IN
120 Ω
dV/dt (c)
dV/dt
0 V
5 V, V
CC
21575
AC
R
L
V
IN
M
on
R
L
R
TEST
V
IN
C
TEST