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STPS24045TV

P1-P3P4-P4
1/4
STPS24045TV
®
July 2003 - Ed : 4A
POWER SCHOTTKY RECTIFIER
I
F(AV)
2 x 120 A
V
RRM
45 V
V
F
(max) 0.67 V
MAIN PRODUCT CHARACTERISTICS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW THERMAL RESISTANCE
INSULATED PACKAGE:
Insulating voltage = 2500 V
(RMS)
Capacitance = 45pF
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Dual power Schottky rectifier suited for Switched
Mode Power Supplies and high frequency DC to
DC converters.
Packaged in ISOTOP, this device is especially in-
tended for use in low voltage, high frequency in-
verters, free wheeling and polarity protection
applications.
DESCRIPTION
ISOTOP
TM
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 45 V
I
F(RMS)
RMS forward current 170 A
I
F(AV)
Average forward current Tc = 80°C
δ = 0.5
Per diode
Per device
120
240
A
I
FSM
Surge non repetitive forward current tp = 10 ms
Sinusoidal
1500 A
I
RRM
Repetitive peak reverse current tp=2µs
F = 1kHz square
2A
I
RSM
Non repetitive peak reverse current tp = 100 µs square 10 A
P
ARM
Repetitive peak avalanche power tp = 1µs Tj = 25°C 43000 W
T
stg
Storage temperature range - 55 to + 150 °C
Tj Maximum operating junction temperature 150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
ABSOLUTE RATINGS (limiting values, per diode)
ISOTOP is a trademark of STMicroelectronics
K2 A2
A1K1
*:
dPtot
dTj Rth j a
<
−
1
()
thermal runaway condition for a diode on its own heatsink
STPS24045TV
2/4
Symbol Parameter Value Unit
R
th (j-c)
Junction to case Per diode 0.65 °C/W
Total 0.28
R
th (c)
Coupling 0.10
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
THERMAL RESISTANCES
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
I
R
* Reverse leakage current Tj = 25°CV
R
=V
RRM
2mA
Tj = 125°C 300
V
F
* Forward voltage drop Tj = 25°CI
F
= 240 A 0.91 V
Tj = 125°CI
F
= 240 A 0.72 0.87
Tj = 125°CI
F
= 120 A 0.52 0.67
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test : * tp=5ms,δ<2%
** tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation :
P=0.47xI
F(AV)
+ 0.00167 x I
F
2
(RMS)
0 25 50 75 100 125 150
0
20
40
60
80
100
120
140
Tamb(°C)
IF(av)(A)
Rth(j-a)=5°C/W
Rth(j-a)=Rth(j-c)
Rth(j-a)=2°C/W
T
δ
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (δ= 0.5, per diode).
0 20 40 60 80 100 120 140
0
10
20
30
40
50
60
70
80
90
100
110
IF(av) (A)
PF(av)(W)
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
T
δ
=tp/T
tp
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0
0.2
0.4
0.6
0.8
1
1.2
0 25 50 75 100 125 150
T (°C)
j
P(t)
P (25°C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.10.01 1
0.1
10 100 1000
1
t (µs)
p
P(t)
P (1µs)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS24045TV
3/4
1E-3 1E-2 1E-1 1E+0 5E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
T
δ
=tp/T
tp
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
0 5 10 15 20 25 30 35 40 45
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
VR(V)
IR(mA)
Tj=100°C
Tj=125°C
Tj=75°C
Tj=50°C
Tj=25°C
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1E-3 1E-2 1E-1 1E+0
0
100
200
300
400
500
600
700
800
t(s)
IM(A)
Tc=75°C
Tc=50°C
Tc=25°C
IM
t
δ=0.5
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
12 51020 50
1
10
50
VR(V)
C(nF)
F=1MHz
Tj=25°C
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
10
100
500
VFM(V)
IFM(A)
Tj=125°C
(Typical values)
Tj=25°C
Tj=125°C
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
P1-P3P4-P4

STPS24045TV

Mfr. #:
Buy STPS24045TV
Manufacturer:
STMicroelectronics
Description:
DIODE MODULE 45V 120A ISOTOP
Lifecycle:
New from this manufacturer.
Delivery:
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