Nexperia
PMEG40T30ER
40 V, 3 A low Trench MEGA Schottky barrier rectifier
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage T
j
= 25 °C - 40 V
I
F
forward current δ = 1 ; T
sp
≤ 145 °C - 4.2 A
I
F(AV)
average forward current δ = 0.5 ; f = 20 kHz; T
sp
≤ 150 °C; square
wave
- 3 A
I
FSM
non-repetitive peak
forward current
t
p
= 8 ms; square wave; T
j(init)
= 25 °C - 40 A
[1] - 0.68 WP
tot
total power dissipation T
amb
≤ 25 °C
[2] - 1.15 W
T
j
junction temperature - 175 °C
T
amb
ambient temperature -55 175 °C
T
stg
storage temperature -65 175 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] [2] - - 220 K/WR
th(j-a)
thermal resistance
from junction to
ambient
in free air
[1] [3] - - 130 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
[4] - - 18 K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses P
R
are a
significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[4] Soldering point of cathode tab.
PMEG40T30ER All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 6 March 2018 3 / 14
